IRG7PH35UDPBF

IRG7PH35UDPBF
Mfr. #:
IRG7PH35UDPBF
制造商:
Infineon Technologies
描述:
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
生命周期:
制造商新产品。
数据表:
IRG7PH35UDPBF 数据表
交货:
DHL FedEx Ups TNT EMS
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HTML Datasheet:
IRG7PH35UDPBF DatasheetIRG7PH35UDPBF Datasheet (P4-P6)IRG7PH35UDPBF Datasheet (P7-P9)IRG7PH35UDPBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRG7PH35UDPBF 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1.2 kV
集电极-发射极饱和电压:
1.9 V
最大栅极发射极电压:
30 V
25 C 时的连续集电极电流:
50 A
Pd - 功耗:
180 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
打包:
管子
连续集电极电流 Ic 最大值:
50 A
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
400
子类别:
IGBT
第 # 部分别名:
SP001537540
单位重量:
1.340411 oz
Tags
IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型号 制造商 描述 库存 价格
IRG7PH35UDPBF
DISTI # 30155874
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
238
  • 100:$5.4240
  • 25:$6.2400
  • 10:$6.5472
  • 3:$7.2384
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF-ND
Infineon Technologies AGIGBT 1200V 50A 180W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
340In Stock
  • 1000:$4.4931
  • 500:$5.1587
  • 100:$5.9242
  • 25:$6.8228
  • 1:$7.9200
IRG7PH35UDPBF
DISTI # C1S322000499276
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
238
  • 200:$4.8900
  • 100:$5.9100
  • 50:$6.3900
  • 25:$6.9600
  • 10:$7.1200
  • 1:$10.4000
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 400
Asia - 400
  • 400:$4.6428
  • 800:$4.4520
  • 1200:$4.3919
  • 2000:$4.2207
  • 4000:$4.1666
  • 10000:$4.0625
  • 20000:$3.9634
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 100
Container: Tube
Americas - 0
  • 100:$4.4900
  • 150:$4.3900
  • 250:$4.1900
  • 500:$4.0900
  • 1000:$3.9900
IRG7PH35UDPBF
DISTI # 942-IRG7PH35UDPBF
Infineon Technologies AGIGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
RoHS: Compliant
127
  • 1:$7.5400
  • 10:$6.8200
  • 25:$6.5000
  • 100:$5.6500
IRG7PH35UDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant
25
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant
19
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational Rectifier 
RoHS: Compliant
Europe - 995
    IRG7PH35UDPBF
    DISTI # 1857366
    Infineon Technologies AGIGBT,N CH,DIODE,1200V,50A,TO-247AC
    RoHS: Compliant
    0
    • 1:$11.9300
    • 10:$10.8000
    • 25:$10.3000
    • 100:$8.9400
    图片 型号 描述
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP

    Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP-MICRO-COMMERCIAL-COMPONENTS

    Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    可用性
    库存:
    127
    订购:
    2110
    输入数量:
    IRG7PH35UDPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$7.54
    US$7.54
    10
    US$6.81
    US$68.10
    25
    US$6.49
    US$162.25
    100
    US$5.64
    US$564.00
    250
    US$5.38
    US$1 345.00
    500
    US$4.91
    US$2 455.00
    1000
    US$4.28
    US$4 280.00
    2500
    US$4.12
    US$10 300.00
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