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MRF6V3090NBR1

MRF6V3090NBR1
Mfr. #:
MRF6V3090NBR1
制造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
生命周期:
制造商新产品。
数据表:
MRF6V3090NBR1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
恩智浦
产品分类：
射频 MOSFET 晶体管
RoHS：
E
晶体管极性：
N通道
技术：
硅
Vds - 漏源击穿电压：
115 V
获得：
22 dB
输出功率：
18 W
最高工作温度：
+ 150 C
安装方式：
贴片/贴片
包装/案例：
TO-270-4
打包：
卷轴
配置：
单身的
工作频率：
0.47 GHz to 0.86 GHz
系列：
MRF6V3090N
类型：
射频功率MOSFET
品牌：
恩智浦/飞思卡尔
湿气敏感：
是的
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
500
子类别：
MOSFET
Vgs - 栅源电压：
10 V
Vgs th - 栅源阈值电压：
2.4 V
第 # 部分别名：
935310252528
单位重量：
0.067412 oz
Tags
MRF6V3090NB, MRF6V3, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
***nsix Microsemi
1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272
***ical
Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R
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RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
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FREESCALE SEMICONDUCTOR MRF6V4300NBR5 RF MOSFET, N CHANNEL, 110V, TO-272
*** Electronic Components
RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET
***or
RF POWER FIELD-EFFECT TRANSISTOR
***ark
RF MOSFET, N CHANNEL, 110V, TO-272; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:TO-272; Gain:22dB; Gate-Source Voltage:10V; Operating Frequency Max:450MHz; Output Power, Pout:300W
***escale Semiconductor
GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V
***et
RF Power Field Effect Transistor 26V 1800MHz to 2000MHz 4-Pin TO-270 WB T/R
***ical
Trans RF MOSFET N-CH 68V 4-Pin TO-270 WB EP T/R
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RF MOSFET Transistors 1880MHZ 60W
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Transistor RF FET N-CH 68V 900MHz 4-Pin TO-270WB T/R
***ponent Stockers USA
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-270AA
***roFlash
Trans Mosfet N-ch 68V 4-PIN TO-270 Wb Ep T/r
***i-Key
RF ULTRA HIGH FREQUENCY BAND, N-
***et
Trans MOSFET N-CH 65V 4-Pin TO-270 WB EP T/R
*** Electronic Components
RF MOSFET Transistors 1990MHZ 60W 28V TO270WB4N
***ponent Stockers USA
L BAND Si N-CHANNEL RF POWER MOSFET TO-270
***et
Trans MOSFET N-CH 68V 4-Pin TO-270 WB EP T/R
***ponent Stockers USA
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-270AA
*** Electronic Components
RF MOSFET Transistors 100W 900MHZ26V
***i-Key
RF ULTRA HIGH FREQUENCY BAND, N-
型号 制造商 描述 库存 价格
MRF6V3090NBR1
DISTI # 26078380		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R81
  • 1:$90.3960
MRF6V3090NBR1
DISTI # MRF6V3090NBR1-ND		NXP SemiconductorsFET RF 110V 860MHZ TO272-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 500:$51.2742
MRF6V3090NBR1
DISTI # MRF6V3090NBR1		NXP SemiconductorsTrans MOSFET N-CH 110V 4-Pin TO-272 WB T/R - Tape and Reel (Alt: MRF6V3090NBR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$56.0900
  • 1000:$53.8900
  • 2000:$51.7900
  • 3000:$49.9900
  • 5000:$48.9900
MRF6V3090NBR1
DISTI # MRF6V3090NBR1		NXP SemiconductorsTrans MOSFET N-CH 110V 4-Pin TO-272 WB T/R (Alt: MRF6V3090NBR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 0
  • 500:€55.8900
  • 1000:€53.5900
  • 2000:€51.5900
  • 3000:€47.8900
  • 5000:€44.6900
MRF6V3090NBR1
DISTI # 841-MRF6V3090NBR1		NXP SemiconductorsRF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
RoHS: Compliant		0
  • 500:$49.7400
MRF6V3090NBR5
DISTI # 841-MRF6V3090NBR5		NXP SemiconductorsRF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
RoHS: Compliant		25
  • 1:$87.1700
  • 5:$85.4800
  • 10:$82.6500
  • 25:$79.1600
  • 50:$78.0700
  • 100:$72.6100
MRF6V3090NBR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
RoHS: Compliant		2
  • 1000:$66.9400
  • 500:$70.4600
  • 100:$73.3600
  • 25:$76.5000
  • 1:$82.3900
MRF6V3090NBR1
DISTI # MRF6V3090NBR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		1
  • 500:$59.5200
图片 型号 描述
MRF6V3090NBR1

Mfr.#: MRF6V3090NBR1

OMO.#: OMO-MRF6V3090NBR1

 RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
MRF6V3090NR1

Mfr.#: MRF6V3090NR1

OMO.#: OMO-MRF6V3090NR1

 RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
MRF6V3090NR5

Mfr.#: MRF6V3090NR5

OMO.#: OMO-MRF6V3090NR5

 RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
MRF6V3090N

Mfr.#: MRF6V3090N

OMO.#: OMO-MRF6V3090N-1190

 全新原装
MRF6V3090NBR

Mfr.#: MRF6V3090NBR

OMO.#: OMO-MRF6V3090NBR-1190

 全新原装
MRF6V3090NR1

Mfr.#: MRF6V3090NR1

OMO.#: OMO-MRF6V3090NR1-NXP-SEMICONDUCTORS

 FET RF 110V 860MHZ TO270-4
MRF6V3090NBR1

Mfr.#: MRF6V3090NBR1

OMO.#: OMO-MRF6V3090NBR1-NXP-SEMICONDUCTORS

 FET RF 110V 860MHZ TO272-4
MRF6V3090NR5

Mfr.#: MRF6V3090NR5

OMO.#: OMO-MRF6V3090NR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
MRF6V3090NBR5

Mfr.#: MRF6V3090NBR5

OMO.#: OMO-MRF6V3090NBR5-NXP-SEMICONDUCTORS

 FET RF 110V 860MHZ TO272-4
可用性
库存:
Available
订购:
3000
输入数量:
MRF6V3090NBR1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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