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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1CT-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1DKR-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1TR-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SGB02N120 DISTI # SGB02N120 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin TO-263 T/R (Alt: SGB02N120) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| SGB02N120 DISTI # SP000012558 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin TO-263 T/R (Alt: SP000012558) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| SGB02N120XT DISTI # SGB02N120ATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: SGB02N120ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| SGB02N120ATMA1 DISTI # 43AC4018 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3,DC Collector Current:6.2A,Collector Emitter Saturation Voltage Vce(on):3.1V,Power Dissipation Pd:62W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-263,No. of Pins:3Pins,RoHS Compliant: Yes | 1580 |
|
| SGB02N120 DISTI # 726-SGB02N120 | Infineon Technologies AG | IGBT Transistors FAST IGBT NPT TECH 1200V 2A RoHS: Compliant | 956 |
|
| SGB02N120ATMA1 DISTI # N/A | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS | 0 | |
| SGB02N120CT | Infineon Technologies AG | RoHS: Not Compliant | 132 |
|
| SGB02N120ATMA1 DISTI # 2803433 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3 RoHS: Compliant | 1580 |
|
| SGB02N120ATMA1 DISTI # 2803433 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3 RoHS: Compliant | 1940 |
|
| SGB02N120ATMA1 DISTI # C1S322000681770 | Infineon Technologies AG | IGBT Chip RoHS: Compliant | 1953 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: GB02SHT01-46 OMO.#: OMO-GB02SHT01-46 |
Schottky Diodes & Rectifiers SiC Schottky Diode |
|
Mfr.#: GB02SLT12-214 OMO.#: OMO-GB02SLT12-214 |
Schottky Diodes & Rectifiers 1200V 5A Standard |
|
|
Mfr.#: GB02SHT03-46 OMO.#: OMO-GB02SHT03-46 |
Schottky Diodes & Rectifiers SiC Schottky Diode |
|
Mfr.#: GB02SLT12-220 OMO.#: OMO-GB02SLT12-220 |
Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rectifier |
|
Mfr.#: GB02SLT06-214 OMO.#: OMO-GB02SLT06-214 |
Schottky Diodes & Rectifiers SiC Schottky Rectifier - 650 V - 2 A - DO-214 (SMB) |
|
Mfr.#: GB02SLT12-214 |
Schottky Diodes & Rectifiers 1200V 5A Standard |
|
Mfr.#: GB02SLT12-252 |
Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rect. |
|
Mfr.#: GB02SHT06-46 |
Schottky Diodes & Rectifiers SiC Schottky Diode |
|
|
Mfr.#: GB02N120 OMO.#: OMO-GB02N120-1190 |
全新原装 |
|
|
Mfr.#: GB02SMIL12-252 OMO.#: OMO-GB02SMIL12-252-1190 |
SCHOTTKY RECEIFIER |