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FDB035N10A

FDB035N10A
Mfr. #:
FDB035N10A
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V N-Channel PowerTrench MOSFET
生命周期:
制造商新产品。
数据表:
FDB035N10A 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDB035N10A 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
214 A
Rds On - 漏源电阻：
3 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
89 nC
Pd - 功耗：
333 W
配置：
单身的
商品名：
动力战壕
打包：
卷轴
高度：
4.83 mm
长度：
10.67 mm
系列：
FDB035N10A
晶体管类型：
1 N-Channel
宽度：
9.65 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
167 S
秋季时间：
11 ns
产品类别：
MOSFET
上升时间：
54 ns
出厂包装数量：
800
子类别：
MOSFET
单位重量：
0.046296 oz
Tags
FDB035, FDB03, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDB035N10A
DISTI # V36:1790_06338016		ON SemiconductorULTRAFET0
  • 800000:$2.1070
  • 400000:$2.1100
  • 80000:$2.2850
  • 8000:$2.5810
  • 800:$2.6300
FDB035N10A
DISTI # V72:2272_06338016		ON SemiconductorULTRAFET0
    FDB035N10A
    DISTI # FDB035N10ACT-ND    		ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		519In Stock
    • 100:$3.7961
    • 10:$4.6330
    • 1:$5.1600
    FDB035N10A
    DISTI # FDB035N10ADKR-ND    		ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		519In Stock
    • 100:$3.7961
    • 10:$4.6330
    • 1:$5.1600
    FDB035N10A
    DISTI # FDB035N10ATR-ND    		ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		On Order
    • 2400:$2.5137
    • 1600:$2.6460
    • 800:$3.1374
    FDB035N10A
    DISTI # FDB035N10A    		ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Asia - 0
    • 40000:$2.9508
    • 20000:$3.0000
    • 8000:$3.1035
    • 4000:$3.2143
    • 2400:$3.3333
    • 1600:$3.4615
    • 800:$3.6000
    FDB035N10A
    DISTI # FDB035N10A    		ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 8000:$2.2222
    • 4800:$2.2785
    • 3200:$2.3077
    • 1600:$2.3377
    • 800:$2.3529
    FDB035N10A
    DISTI # FDB035N10A    		ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
    • 8000:€1.9900
    • 4800:€2.1900
    • 3200:€2.3900
    • 1600:€2.4900
    • 800:€2.5900
    FDB035N10A
    DISTI # 07AH3889    		ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:214A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$3.0100
    • 250:$3.3600
    • 100:$3.5500
    • 50:$3.7300
    • 25:$3.9100
    • 10:$4.0900
    • 1:$4.8100
    FDB035N10A
    DISTI # 54T8309    		ON SemiconductorN CHANNEL MOSFET, POWERTRENCH, 100V, 120A, D2PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes0
    • 4800:$2.4200
    • 3200:$2.5100
    • 1600:$2.5500
    • 800:$2.5900
    • 1:$2.6300
    FDB035N10A.
    DISTI # 25AC9517    		Fairchild Semiconductor CorporationFET 100V 3.5 MOHM D2PAK ROHS COMPLIANT: YES0
    • 8000:$2.2300
    • 4800:$2.2800
    • 3200:$2.3100
    • 1600:$2.3400
    • 1:$2.3600
    FDB035N10A
    DISTI # 512-FDB035N10A    		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant    		226
    • 1:$4.7600
    • 10:$4.0500
    • 100:$3.5100
    • 250:$3.3300
    • 500:$2.9800
    FDB035N10A
    DISTI # 8023200P    		ON SemiconductorMOSFETFAIRCHILDFDB035N10A, RL3092
    • 400:£2.5050
    • 200:£2.9250
    • 40:£3.3400
    • 8:£3.7600
    FDB035N10A
    DISTI # 8023200    		ON SemiconductorMOSFETFAIRCHILDFDB035N10A, PK46
    • 400:£2.5050
    • 200:£2.9250
    • 40:£3.3400
    • 8:£3.7600
    • 2:£4.1800
    FDB035N10A
    DISTI # 3004018    		ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263800
    • 500:£2.2300
    • 250:£2.4900
    • 100:£2.6200
    • 10:£3.0300
    • 1:£3.9600
    FDB035N10A
    DISTI # 3004018    		ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263
    RoHS: Compliant    		0
    • 1000:$3.4400
    • 500:$3.7300
    • 250:$4.0600
    • 100:$4.4700
    • 10:$4.9700
    • 1:$5.5800
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    可用性
    库存:
    166
    订购:
    2149
    输入数量:
    FDB035N10A的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$4.76
    US$4.76
    10
    US$4.05
    US$40.50
    100
    US$3.51
    US$351.00
    250
    US$3.33
    US$832.50
    500
    US$2.98
    US$1 490.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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