MR2A08AMA35R

Mfr. #:: MR2A08AMA35R
制造商:: Everspin Technologies
描述:: IC RAM 4M PARALLEL 48FBGA
生命周期:: 制造商新产品。
数据表:: MR2A08AMA35R 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR2A08AMA35R 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: -

打包: 卷带 (TR) 替代包装

包装盒: 48-LFBGA

工作温度: 0°C ~ 70°C (TA)

界面: 平行线

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 48-FBGA (8x8)

内存大小: 4M (512K x 8)

内存型: MRAM（磁阻RAM）

速度: 35ns

格式化内存: 内存

Tags: MR2A08AM, MR2A0, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A08AMA35R 评级和评论

V***o

Very long shipping. Already wanted to open a dispute. The parcel came on 63 days after sending.

2019-05-16

E**r

The parcel reached 19 days, super.

2019-06-05

G***r

Everything is fine!!!!

2019-05-15

E**h

The order is delivered quickly, the quantity is accurate, the handles are laid out according to the packages in accordance with the color. I liked them, i will order more. Seller thanks!

2019-09-17

MR2A08AMA35R 描述

***i-Key: IC RAM 4M PARALLEL 48FBGA

MR2A08AMA35R 更多信息

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

型号	制造商	描述	库存	价格
MR2A08AMA35R DISTI # MR2A08AMA35R-ND	Everspin Technologies	IC RAM 4M PARALLEL 48FBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$19.5130
MR2A08AMA35 DISTI # 936-MR2A08AMA35	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	0	696:$16.1300
MR2A08AMA35R DISTI # 936-MR2A08AMA35R	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	0	2000:$16.4300

相关产品

图片	型号	描述
	Mfr.#: MR2A08ACMA35 OMO.#: OMO-MR2A08ACMA35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AYS35 OMO.#: OMO-MR2A08AYS35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35 OMO.#: OMO-MR2A08AMA35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMYS35R OMO.#: OMO-MR2A08AMYS35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35R OMO.#: OMO-MR2A08AMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA
	Mfr.#: MR2A08AMYS35R OMO.#: OMO-MR2A08AMYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACYS35R OMO.#: OMO-MR2A08ACYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMYS35 OMO.#: OMO-MR2A08AMYS35-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35 OMO.#: OMO-MR2A08AMA35-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA
	Mfr.#: MR2A08AYS35 OMO.#: OMO-MR2A08AYS35-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM