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STGB14NC60KDT4

STGB14NC60KDT4
Mfr. #:
STGB14NC60KDT4
制造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH&#34 IGBT
生命周期:
制造商新产品。
数据表:
STGB14NC60KDT4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGB14NC60KDT4 更多信息 STGB14NC60KDT4 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
D2PAK-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.1 V
最大栅极发射极电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
STGB14NC60KDT4
打包：
卷轴
连续集电极电流 Ic 最大值：
25 A
高度：
4.6 mm
长度：
10.4 mm
宽度：
9.35 mm
品牌：
意法半导体
连续集电极电流：
25 A
栅极-发射极漏电流：
2 A
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
单位重量：
0.079014 oz
Tags
STGB14NC60KD, STGB14, STGB1, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 25A 80W D2PAK
***ure Electronics
STGB7NC60H Series 600 V 14 A N-Channel Power Mesh IGBT - D2PAK
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ark
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current:25A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:80W; Collector Emitter Voltage V(Br)Ceo:-; Transistor Case Style:to-263; No. Of Pins:3Pins; Operating Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK
***Parts
IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount
***ment14 APAC
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current:10A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W;
***nell
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ure Electronics
STGB10NC60HD Series 600 V 20 A Surface Mount Very fast IGBT - D2PAK-3
***ical
Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
STGB10NC60HDT4,IGBT N-ch 600V 10A D2PAK
***nell
IGBT, N 600V 10A D²PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Ope
型号 制造商 描述 库存 价格
STGB14NC60KDT4
DISTI # V72:2272_18458244		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7440
  • 500:$0.8779
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
  • 1:$1.3866
STGB14NC60KDT4
DISTI # 497-5109-1-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2980In Stock
  • 500:$1.1903
  • 100:$1.4245
  • 10:$1.7460
  • 1:$1.9300
STGB14NC60KDT4
DISTI # 497-5109-6-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2980In Stock
  • 500:$1.1903
  • 100:$1.4245
  • 10:$1.7460
  • 1:$1.9300
STGB14NC60KDT4
DISTI # 497-5109-2-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 5000:$0.9063
  • 2000:$0.9163
  • 1000:$0.9761
STGB14NC60KDT4
DISTI # 30523276		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7440
  • 500:$0.8779
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
  • 9:$1.3866
STGB14NC60KDT4
DISTI # STGB14NC60KDT4		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB14NC60KDT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8539
  • 2000:$0.8139
  • 4000:$0.7769
  • 6000:$0.7429
  • 10000:$0.7269
STGB14NC60KDT4
DISTI # STGB14NC60KDT4		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB14NC60KDT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.7139
  • 2000:€0.7119
  • 4000:€0.7109
  • 6000:€0.7089
  • 10000:€0.7069
STGB14NC60KDT4
DISTI # 511-STGB14NC60KDT4		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
RoHS: Compliant		1452
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
STGB14NC60KDT4
DISTI # IGBT2121		STMicroelectronicsIGBT 600V 14A 1,8VD2PAK
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 1000:$0.8608
  • 2000:$0.8079
  • 4000:$0.7814
  • 6000:$0.7218
STGB14NC60KDT4
DISTI # C1S730201102808		STMicroelectronicsIGBT Chip
RoHS: Compliant		1000
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
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OPA4196ID

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Mfr.#: STI28N60M2

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STF11N60DM2

Mfr.#: STF11N60DM2

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 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
VIPER12AS-E

Mfr.#: VIPER12AS-E

OMO.#: OMO-VIPER12AS-E

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STM32F407VGT6

Mfr.#: STM32F407VGT6

OMO.#: OMO-STM32F407VGT6

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TPS54335ADDAR

Mfr.#: TPS54335ADDAR

OMO.#: OMO-TPS54335ADDAR

 Switching Voltage Regulators 4.5-28V Input 3A Sync SD Cnvtr
2499-003-X5W0-103ZLF

Mfr.#: 2499-003-X5W0-103ZLF

OMO.#: OMO-2499-003-X5W0-103ZLF

 EMI Feedthrough Filters 10000pF 500Volts
可用性
库存:
Available
订购:
1984
输入数量:
STGB14NC60KDT4的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.68
US$1.68
10
US$1.43
US$14.30
100
US$1.14
US$114.00
500
US$1.00
US$499.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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