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HGTG10N120BND

HGTG10N120BND
Mfr. #:
HGTG10N120BND
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 35A 1200V N-Ch
生命周期:
制造商新产品。
数据表:
HGTG10N120BND 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
E
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
2.45 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
17 A
Pd - 功耗：
298 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
HGTG10N120BND
打包：
管子
连续集电极电流 Ic 最大值：
35 A
高度：
20.82 mm
长度：
15.87 mm
宽度：
4.82 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
35 A
栅极-发射极漏电流：
+/- 250 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
HGTG10N120BND_NL
单位重量：
0.225401 oz
Tags
HGTG10N120BND, HGTG10N120B, HGTG10, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
型号 制造商 描述 库存 价格
HGTG10N120BND
DISTI # C1S541901484134		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		140
  • 100:$2.5900
  • 50:$2.8200
  • 10:$3.4400
  • 1:$5.3000
HGTG10N120BND
DISTI # HGTG10N120BND-ND		ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		855In Stock
  • 1350:$2.1481
  • 900:$2.5216
  • 450:$2.7946
  • 10:$3.5560
  • 1:$3.9500
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.3900
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450		Asia - 0
    HGTG10N120BND
    DISTI # HGTG10N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.5900
    • 900:$1.5900
    • 1800:$1.5900
    • 2700:$1.4900
    • 4500:$1.4900
    HGTG10N120BND
    DISTI # 98B1928    		ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 1:$3.7700
    • 10:$3.2200
    • 25:$3.0800
    • 50:$2.9500
    • 100:$2.8100
    • 250:$2.6800
    • 500:$2.4200
    HGTG10N120BND.
    DISTI # 16AC0004    		Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
      HGTG10N120BNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		485
      • 1000:$1.8000
      • 500:$1.9000
      • 100:$1.9800
      • 25:$2.0600
      • 1:$2.2200
      HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
      RoHS: Compliant      		75Tube
      • 5:$2.9400
      • 25:$1.9900
      • 50:$1.8300
      • 250:$1.5100
      HGTG10N120BND
      DISTI # 512-HGTG10N120BND      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Compliant      		29
      • 1:$3.6300
      • 10:$3.0800
      • 100:$2.6700
      • 250:$2.5400
      • 500:$2.2800
      HGTG10N120BND_Q
      DISTI # 512-HGTG10N120BND_Q      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Not compliant      		0
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BND
          DISTI # HGTG10N120BND          		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247429
          • 1:$3.6000
          • 3:$3.1900
          • 10:$2.7200
          • 30:$2.3500
          • 150:$2.1300
          HGTG10N120BNDFairchild Semiconductor Corporation 
          RoHS: Compliant          		Europe - 1130
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            可用性
            库存:
            641
            订购:
            2624
            输入数量:
            HGTG10N120BND的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$3.62
            US$3.62
            10
            US$3.07
            US$30.70
            100
            US$2.66
            US$266.00
            250
            US$2.53
            US$632.50
            500
            US$2.27
            US$1 135.00
            1000
            US$1.91
            US$1 910.00
            2500
            US$1.82
            US$4 550.00
            5000
            US$1.75
            US$8 750.00
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