FF150R12ME3G

FF150R12ME3G
Mfr. #:
FF150R12ME3G
制造商:
Infineon Technologies
描述:
IGBT Modules N-CH 1.2KV 200A
生命周期:
制造商新产品。
数据表:
FF150R12ME3G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT 模块
产品:
IGBT 硅模块
配置:
双重的
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
1.7 V
25 C 时的连续集电极电流:
200 A
栅极-发射极漏电流:
400 nA
Pd - 功耗:
695 W
包装/案例:
EconoDUAL-3
最低工作温度:
- 40 C
最高工作温度:
+ 125 C
打包:
托盘
高度:
17 mm
长度:
152 mm
宽度:
62 mm
品牌:
英飞凌科技
安装方式:
底盘安装
最大栅极发射极电压:
20 V
产品类别:
IGBT 模块
出厂包装数量:
10
子类别:
IGBT
第 # 部分别名:
FF150R12ME3GBOSA1 SP000317332
单位重量:
12.169517 oz
Tags
FF150R12ME, FF150R12M, FF150R12, FF150R1, FF150R, FF150, FF15, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3
***i-Key
IGBT MOD 1200V 200A 695W
***omponent
Infineon power module
***et
MEDIUM POWER ECONO
***ineon
EconoDUAL 3 1200V dual IGBT module with Trench/Fieldstop IGBT3 and Emitter Controlled High Efficiency diode | Summary of Features: Easy separation of DC and AC; Optimized Thermal Resistance Case to Heat Sink; Highest Power Density for compact Inverter Designs | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
型号 制造商 描述 库存 价格
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 150A
RoHS: Not compliant
Min Qty: 10
Container: Bulk
Limited Supply - Call
  • 10:$92.3980
FF150R12ME3G
DISTI # FF150R12ME3G
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 - Bulk (Alt: FF150R12ME3G)
RoHS: Compliant
Min Qty: 5
Container: Bulk
Americas - 0
  • 50:$79.7900
  • 25:$81.2900
  • 15:$84.0900
  • 10:$87.2900
  • 5:$90.4900
FF150R12ME3G
DISTI # SP000317332
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 (Alt: SP000317332)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€74.0900
  • 500:€75.8900
  • 100:€78.0900
  • 50:€80.7900
  • 25:€83.5900
  • 10:€91.9900
  • 1:€113.7900
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1
Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FF150R12ME3GBOSA1)
Min Qty: 5
Container: Bulk
Americas - 0
  • 50:$74.4900
  • 25:$75.7900
  • 15:$78.4900
  • 10:$81.3900
  • 5:$84.4900
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1
Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FF150R12ME3GBOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 100:$75.6900
  • 60:$77.5900
  • 40:$79.4900
  • 20:$81.5900
  • 10:$82.6900
FF150R12ME3G
DISTI # 641-FF150R12ME3G
Infineon Technologies AGIGBT Modules N-CH 1.2KV 200A7
  • 1:$100.5700
  • 5:$98.7300
  • 10:$94.2800
  • 25:$91.1400
2SP0115T2A0-FF150R12ME3G
DISTI # 869-A0-FF150R12ME3G
Power IntegrationsPower Management Modules 2SP0115T PI Gate Driver ONLY
RoHS: Not compliant
0
  • 12:$87.2800
  • 48:$80.7700
2SP0115T2B0-FF150R12ME3G
DISTI # 869-B0-FF150R12ME3G
Power IntegrationsPower Management Modules 2SP0115T PI Gate Driver ONLY
RoHS: Not compliant
0
  • 12:$96.0100
  • 48:$88.8500
DB01-FF150R12ME3G
DISTI # 869-FF150R12M3G
Power IntegrationsPower Management Modules DB01
RoHS: Not compliant
0
    FF150R12ME3GInfineon Technologies AGInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    428
    • 1000:$82.7100
    • 500:$87.0600
    • 100:$90.6400
    • 25:$94.5300
    • 1:$101.8000
    FF150R12ME3GBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    140
    • 1000:$77.2000
    • 500:$81.2600
    • 100:$84.6000
    • 25:$88.2300
    • 1:$95.0100
    2SD316EI-12-DB01-FF150R12ME3G
    DISTI # DB01-FF150R12ME
    Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
    RoHS: Not Compliant
    0
    • 12:$166.0800
    • 40:$153.6800
    图片 型号 描述
    EYG-S0612ZLWF

    Mfr.#: EYG-S0612ZLWF

    OMO.#: OMO-EYG-S0612ZLWF

    Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
    EYG-S0612ZLWF

    Mfr.#: EYG-S0612ZLWF

    OMO.#: OMO-EYG-S0612ZLWF-PANASONIC

    Heat Insulating Sheet
    ISO5852SDWEVM-017

    Mfr.#: ISO5852SDWEVM-017

    OMO.#: OMO-ISO5852SDWEVM-017-TEXAS-INSTRUMENTS

    DEVELOPMENT INTERFACE
    可用性
    库存:
    Available
    订购:
    1990
    输入数量:
    FF150R12ME3G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$100.57
    US$100.57
    5
    US$98.73
    US$493.65
    10
    US$94.28
    US$942.80
    25
    US$91.14
    US$2 278.50
    100
    US$84.87
    US$8 487.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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