OMO ElectronicOMO Electronic
Expand menu
0 购物车

FGA30S120P

FGA30S120P
Mfr. #:
FGA30S120P
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Shorted AnodeTM IGBT
生命周期:
制造商新产品。
数据表:
FGA30S120P 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGA30S120P 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3PN
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1300 V
集电极-发射极饱和电压：
2.3 V
最大栅极发射极电压：
25 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
174 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
FGA30S120P
打包：
管子
连续集电极电流 Ic 最大值：
60 A
品牌：
安森美半导体/飞兆半导体
栅极-发射极漏电流：
500 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
单位重量：
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***nell
IGBT, 1.3KV, 60A, 175DEG C, 500W; Available until stocks are exhausted Alternative available
***(Formerly Allied Electronics)
FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247 | ON Semiconductor FGH30S130P
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***ical
Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P40N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 40A, COPAK-247AC, TUBE
***el Electronic
CAP CER 4PF 100V C0G/NP0 RADIAL
***ark
Igbt Single Transistor, 63 A, 1.3 Kv, 250 W, 1.3 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1300V 63A 250000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1300V, 63A, 250W, TO247; DC Collector Current: 63A; Collector Emitter Saturation Voltage Vce(on): 1.3kV; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.3kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT
***et
Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
33 A - 1300 V - very fast IGBT
***el Electronic
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
***S
French Electronic Distributor since 1988
***r Electronics
Insulated Gate Bipolar Transistor
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
***nell
IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
型号 制造商 描述 库存 价格
FGA30S120P
DISTI # V99:2348_06359130		ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 5000:$2.1960
  • 2500:$2.2720
  • 1000:$2.3730
  • 500:$2.7460
  • 250:$2.9990
  • 100:$3.1410
  • 10:$3.5010
  • 1:$4.0250
FGA30S120P
DISTI # FGA30S120P-ND		ON SemiconductorIGBT 1300V 60A 348W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$2.5725
  • 900:$3.0503
  • 450:$3.3994
  • 10:$4.3730
  • 1:$4.8700
FGA30S120P
DISTI # 26398855		ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 3:$4.0170
FGA30S120P
DISTI # FGA30S120P		ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.0900
FGA30S120P
DISTI # 95T0023		ON SemiconductorSA2TIGBT TO3PN 30A 1200V / TUBE0
  • 1:$5.0800
  • 10:$4.1200
  • 100:$3.4200
  • 500:$3.0900
  • 1000:$2.6300
  • 2500:$2.5100
  • 10000:$2.3700
FGA30S120P
DISTI # 512-FGA30S120P		ON SemiconductorIGBT Transistors Shorted AnodeTM IGBT
RoHS: Compliant		375
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
FGA30S120PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
RoHS: Compliant		2700
  • 1000:$2.5500
  • 500:$2.6900
  • 100:$2.8000
  • 25:$2.9200
  • 1:$3.1400
FGA30S120P
DISTI # 8648789P		ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, TU204
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # 8648789		ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, PK30
  • 2:£4.0800
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # C1S226600774282		ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail
RoHS: Compliant		892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 1:$4.0170
图片 型号 描述
MCP4022T-103E/CH

Mfr.#: MCP4022T-103E/CH

OMO.#: OMO-MCP4022T-103E-CH

 Digital Potentiometer ICs 10k U/D single 6-bit NV Rheostat
IRS2092STRPBF

Mfr.#: IRS2092STRPBF

OMO.#: OMO-IRS2092STRPBF

 Audio Amplifiers 200V Dig Aud Drvr
5KP30A

Mfr.#: 5KP30A

OMO.#: OMO-5KP30A

 TVS Diodes / ESD Suppressors 30Vso 23VAC 103A
NGD8201ANT4G

Mfr.#: NGD8201ANT4G

OMO.#: OMO-NGD8201ANT4G

 IGBT Transistors NGD8201ANT4G GEN4 IGBT
FGA30N120FTDTU

Mfr.#: FGA30N120FTDTU

OMO.#: OMO-FGA30N120FTDTU

 IGBT Transistors 1200V 30A FS
FGH60N60SFDTU

Mfr.#: FGH60N60SFDTU

OMO.#: OMO-FGH60N60SFDTU

 IGBT Transistors N-Ch/ 60A 600V FS
FCP36N60N

Mfr.#: FCP36N60N

OMO.#: OMO-FCP36N60N

 MOSFET 600V NChannel MOSFET SupreMOS
TNY285DG-TL

Mfr.#: TNY285DG-TL

OMO.#: OMO-TNY285DG-TL

 AC/DC Converters 11.5 W (85-265 VAC) 15 W (230 VAC)
UCC28600DR

Mfr.#: UCC28600DR

OMO.#: OMO-UCC28600DR

 AC/DC Converters Quasi Res Flyback Green Mode Cntrlr
5KP30A

Mfr.#: 5KP30A

OMO.#: OMO-5KP30A-1110

 TVS Diodes - Transient Voltage Suppressors 30Vso 23VAC 103A
可用性
库存:
318
订购:
2301
输入数量:
FGA30S120P的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$4.10
US$4.10
10
US$3.48
US$34.80
100
US$3.02
US$302.00
250
US$2.86
US$715.00
500
US$2.57
US$1 285.00
从...开始
最新产品
More Newest Products
Top