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S25FL128SDPBHB210VCX

S25FL128SDPBHB210VCX
Mfr. #:
S25FL128SDPBHB210VCX
制造商:
Cypress Semiconductor
描述:
NOR Flash IC 128 Mb FLASHMEM
生命周期:
制造商新产品。
数据表:
S25FL128SDPBHB210VCX 数据表
交货:
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ECAD Model:
更多信息:
S25FL128SDPBHB210VCX 更多信息 S25FL128SDPBHB210VCX Product Details
产品属性
属性值
制造商：
赛普拉斯半导体
产品分类：
NOR闪存
RoHS：
Y
安装方式：
贴片/贴片
包装/案例：
BGA-24
系列：
S25FL128S
内存大小：
128 Mbit
最大时钟频率：
66 MHz
接口类型：
SPI
组织：
16 M x 8
计时类型：
异步
数据总线宽度：
8 bit
电源电压 - 最小值：
2.7 V
电源电压 - 最大值：
3.6 V
电源电流 - 最大值：
100 mA
最低工作温度：
- 40 C
最高工作温度：
+ 105 C
资质：
AEC-Q100
打包：
托盘
速度：
66 MHz
品牌：
赛普拉斯半导体
湿气敏感：
是的
产品类别：
NOR闪存
出厂包装数量：
338
子类别：
内存和数据存储
商品名：
镜像位
Tags
S25FL128SDPBHB2, S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
图片 型号 描述
S25FL128SDPMFV000

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OMO.#: OMO-S25FL128SDPMFV000

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S25FL128SDSMFB000

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S25FL128SDSMFN001

Mfr.#: S25FL128SDSMFN001

OMO.#: OMO-S25FL128SDSMFN001

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S25FL128SDPMFV001

Mfr.#: S25FL128SDPMFV001

OMO.#: OMO-S25FL128SDPMFV001

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S25FL128SDSMFA000

Mfr.#: S25FL128SDSMFA000

OMO.#: OMO-S25FL128SDSMFA000

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S25FL128SDSMFV003

Mfr.#: S25FL128SDSMFV003

OMO.#: OMO-S25FL128SDSMFV003

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S25FL128SDSBHA213

Mfr.#: S25FL128SDSBHA213

OMO.#: OMO-S25FL128SDSBHA213

 NOR Flash IC 128 Mb FLASH MEMORY
S25FL128SDPBHI213

Mfr.#: S25FL128SDPBHI213

OMO.#: OMO-S25FL128SDPBHI213-CYPRESS-SEMICONDUCTOR

 IC NOR FL-S
S25FL128SDPNFI000

Mfr.#: S25FL128SDPNFI000

OMO.#: OMO-S25FL128SDPNFI000-CYPRESS-SEMICONDUCTOR

 Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, WSON6X8 IN TRAY PACKING
S25FL128SDPMFV001

Mfr.#: S25FL128SDPMFV001

OMO.#: OMO-S25FL128SDPMFV001-CYPRESS-SEMICONDUCTOR

 Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 66-MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TUBE PACKING)
可用性
库存:
Available
订购:
4500
输入数量:
S25FL128SDPBHB210VCX的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
338
US$4.27
US$1 443.26
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