SI4652DY-T1-E3

Mfr. #:: SI4652DY-T1-E3
制造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 25V 30A 6.0W
生命周期:: 制造商新产品。
数据表:: SI4652DY-T1-E3 数据表
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更多信息:: SI4652DY-T1-E3 更多信息

产品属性
属性值

制造商: 威世 / Siliconix

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

部分别名: SI4652DY-E3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: SOIC-Narrow-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 14 ns

VGS-栅极-源极-电压: 16 V

Id 连续漏极电流: 21.5 A

Vds-漏-源-击穿电压: 25 V

Rds-On-Drain-Source-Resistance: 3.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 40 ns

典型开启延迟时间: 32 ns

通道模式: 增强

Tags: SI465, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4652DY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4652DY-T1-E3 DISTI # 781-SI4652DY-E3	Vishay Intertechnologies	MOSFET 25V 30A 6.0W RoHS: Compliant	0	2500:$0.7700 5000:$0.7420 10000:$0.7130

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	Mfr.#: SI4652DY-T1-E3 OMO.#: OMO-SI4652DY-T1-E3	MOSFET 25V 30A 6.0W
	Mfr.#: SI4652DY-T1-GE3 OMO.#: OMO-SI4652DY-T1-GE3	MOSFET 25V 30A 6.0W 3.5mohm @ 10V
	Mfr.#: SI4652DY-T1-E3 OMO.#: OMO-SI4652DY-T1-E3-317	RF Bipolar Transistors MOSFET 25V 30A 6.0W
	Mfr.#: SI4652DY-T1-GE3 OMO.#: OMO-SI4652DY-T1-GE3-317	RF Bipolar Transistors MOSFET 25V 30A 6.0W 3.5mohm @ 10V