BSC12DN20NS3G

BSC12DN20NS3G
Mfr. #:
BSC12DN20NS3G
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
生命周期:
制造商新产品。
数据表:
BSC12DN20NS3G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
BSC12DN20NS3GATMA1 SP000781774
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TDSON-8
技术
通道数
1 Channel
晶体管型
1 N-Channel
钯功耗
50 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
11.3 A
Vds-漏-源-击穿电压
200 V
Rds-On-Drain-Source-Resistance
108 mOhms
晶体管极性
N通道
正向跨导最小值
12 S 6 S
Tags
BSC12D, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3988In Stock
  • 1000:$0.6050
  • 500:$0.7664
  • 100:$0.9882
  • 10:$1.2500
  • 1:$1.4100
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3988In Stock
  • 1000:$0.6050
  • 500:$0.7664
  • 100:$0.9882
  • 10:$1.2500
  • 1:$1.4100
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5208
BSC12DN20NS3 G
DISTI # SP000781774
Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP (Alt: SP000781774)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 5000:€0.6449
  • 10000:€0.5279
  • 20000:€0.4839
  • 30000:€0.4459
  • 50000:€0.4149
BSC12DN20NS3GXT
DISTI # BSC12DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5119
  • 10000:$0.4939
  • 20000:$0.4759
  • 30000:$0.4599
  • 50000:$0.4519
BSC12DN20NS3GATMA1
DISTI # 50Y1813
Infineon Technologies AGMOSFET Transistor, N Channel, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 1000:$0.6530
  • 500:$0.8270
  • 250:$0.9140
  • 100:$1.0000
  • 50:$1.1000
  • 25:$1.1900
  • 10:$1.2800
  • 1:$1.4400
BSC12DN20NS3GATMA1Infineon Technologies AGSingle N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Compliant
5000Reel
  • 5000:$0.5100
BSC12DN20NS3 G
DISTI # 726-BSC12DN20NS3GATM
Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant
3326
  • 1:$1.1600
  • 10:$0.9970
  • 100:$0.7660
  • 500:$0.6770
  • 1000:$0.5340
  • 5000:$0.4740
  • 10000:$0.4560
BSC12DN20NS3G
DISTI # 726-BSC12DN20NS3G
Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant
8945
  • 1:$1.1600
  • 10:$0.9970
  • 100:$0.7660
  • 500:$0.6770
  • 1000:$0.5340
  • 5000:$0.4740
  • 10000:$0.4560
BSC12DN20NS3GATMA1
DISTI # 1702290
Infineon Technologies AGMOSFET N-CH 200V 11A 125M OPTIMOS3 TDSON, RL4960
  • 10000:£0.4290
  • 5000:£0.4580
BSC12DN20NS3GATMA1
DISTI # 2480747RL
Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant
0
  • 1000:$0.8050
  • 500:$1.0200
  • 100:$1.1500
  • 10:$1.5000
  • 1:$1.7500
BSC12DN20NS3GATMA1
DISTI # 2480747
Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant
0
  • 1000:$0.8050
  • 500:$1.0200
  • 100:$1.1500
  • 10:$1.5000
  • 1:$1.7500
BSC12DN20NS3GATMA1
DISTI # 2480747
Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant
485
  • 500:£0.6050
  • 250:£0.6530
  • 100:£0.7000
  • 25:£0.7760
  • 5:£0.8510
BSC12DN20NS3GATMA1
DISTI # XSFP00000114613
Infineon Technologies AG 
RoHS: Compliant
15000 in Stock0 on Order
  • 15000:$0.6375
  • 5000:$0.6800
图片 型号 描述
BSC12DN20NS3 G

Mfr.#: BSC12DN20NS3 G

OMO.#: OMO-BSC12DN20NS3-G

MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3G

Mfr.#: BSC12DN20NS3G

OMO.#: OMO-BSC12DN20NS3G

MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3 G

Mfr.#: BSC12DN20NS3 G

OMO.#: OMO-BSC12DN20NS3-G-1190

MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3GXT

Mfr.#: BSC12DN20NS3GXT

OMO.#: OMO-BSC12DN20NS3GXT-1190

Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
BSC12DN20NS3GATMA1

Mfr.#: BSC12DN20NS3GATMA1

OMO.#: OMO-BSC12DN20NS3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 200V 11.3A 8TDSON
BSC12DN20NS3G

Mfr.#: BSC12DN20NS3G

OMO.#: OMO-BSC12DN20NS3G-317

RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
可用性
库存:
Available
订购:
4500
输入数量:
BSC12DN20NS3G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.71
US$0.71
10
US$0.68
US$6.76
100
US$0.64
US$63.99
500
US$0.60
US$302.20
1000
US$0.57
US$568.80
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