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IPB530N15N3 G

IPB530N15N3 G
Mfr. #:
IPB530N15N3 G
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
生命周期:
制造商新产品。
数据表:
IPB530N15N3 G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPB530N15N3 G 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
150 V
Id - 连续漏极电流：
21 A
Rds On - 漏源电阻：
53 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
68 W
配置：
单身的
商品名：
优化MOS
打包：
卷轴
高度：
4.4 mm
长度：
10 mm
系列：
OptiMOS 3
晶体管类型：
1 N-Channel
宽度：
9.25 mm
品牌：
英飞凌科技
秋季时间：
3 ns
产品类别：
MOSFET
上升时间：
9 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
13 ns
典型的开启延迟时间：
9 ns
第 # 部分别名：
IPB530N15N3GATMA1 IPB53N15N3GXT SP000521718
单位重量：
0.056438 oz
Tags
IPB53, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***n
    I***n
    RU

    Excellent

    2019-01-12
    A***v
    A***v
    RU

    The parcel came unexpectedly quickly 10 days before volgograd! The seller is good, often i order from him!

    2019-04-04
    P***d
    P***d
    CZ

    To if Aku Packy budou MIT.

    2019-05-13
    E***h
    E***h
    RU

    Fast delivery, the goods correspond to the description! Thank you seller!

    2019-03-19
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB530N15N3GATMA1
DISTI # V72:2272_06384234		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7456
  • 500:$0.8391
  • 250:$0.9170
  • 100:$0.9770
  • 25:$1.1177
  • 10:$1.1472
  • 1:$1.2814
IPB530N15N3GATMA1
DISTI # IPB530N15N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPB530N15N3GATMA1
    DISTI # IPB530N15N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$0.7966
      IPB530N15N3GATMA1
      DISTI # 27067726      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		2000
      • 1000:$0.6854
      IPB530N15N3GATMA1
      DISTI # 30321591      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$0.7456
      • 500:$0.8391
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 11:$1.1472
      IPB530N15N3GATMA1
      DISTI # SP000521718      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 (Alt: SP000521718)
      RoHS: Compliant
      Min Qty: 1000      		Europe - 2000
      • 1000:€1.0359
      • 2000:€0.8079
      • 4000:€0.7219
      • 6000:€0.6569
      • 10000:€0.6159
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB530N15N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$0.6949
      • 2000:$0.6699
      • 4000:$0.6459
      • 6000:$0.6239
      • 10000:$0.6129
      IPB530N15N3GATMA1
      DISTI # 34AC1658      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes955
      • 1:$1.6400
      • 10:$1.4100
      • 25:$1.2700
      • 50:$1.1500
      • 100:$0.9680
      • 250:$0.8560
      • 500:$0.7440
      • 1000:$0.7140
      IPB530N15N3 G
      DISTI # 726-IPB530N15N3G      		Infineon Technologies AGMOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      RoHS: Compliant      		1862
      • 1:$1.5900
      • 10:$1.3600
      • 100:$1.0400
      • 500:$0.9180
      • 1000:$0.7250
      IPB530N15N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		64
      • 1000:$0.5700
      • 500:$0.6000
      • 100:$0.6200
      • 25:$0.6500
      • 1:$0.7000
      IPB530N15N3GATMA1
      DISTI # C1S322000615333      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		1000
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 10:$1.1472
      IPB530N15N3GATMA1
      DISTI # C1S322000525331      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2000
      • 2000:$0.7200
      • 1000:$0.7760
      IPB530N15N3GATMA1
      DISTI # XSKDRABS0006506      		Infineon Technologies AG 
      RoHS: Compliant      		1440
      • 1000:$1.0700
      • 1440:$0.9947
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		1035
      • 5:£0.7870
      • 25:£0.7710
      • 100:£0.7560
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		955
      • 5:$2.2800
      • 25:$1.9800
      • 100:$1.6200
      图片 型号 描述
      LTC2063HS5#TRMPBF

      Mfr.#: LTC2063HS5#TRMPBF

      OMO.#: OMO-LTC2063HS5-TRMPBF

      		 Operational Amplifiers - Op Amps 2 A S C, L IB, Zero-Drift Op Amp
      EPCQ16ASI8N

      Mfr.#: EPCQ16ASI8N

      OMO.#: OMO-EPCQ16ASI8N

      		 FPGA - Configuration Memory
      PIC18F4620-I/PT

      Mfr.#: PIC18F4620-I/PT

      OMO.#: OMO-PIC18F4620-I-PT

      		 8-bit Microcontrollers - MCU 64KB 3968 RAM 36 I/O
      TMK107BLD105KA-T

      Mfr.#: TMK107BLD105KA-T

      OMO.#: OMO-TMK107BLD105KA-T

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 25VDC 1uF 10% X5R
      SJ2-35852B-SMT-TR

      Mfr.#: SJ2-35852B-SMT-TR

      OMO.#: OMO-SJ2-35852B-SMT-TR

      		 Phone Connectors 3.5mm Narrow Ftprint 2conductr Tip switch
      TMK325ABJ476MM-P

      Mfr.#: TMK325ABJ476MM-P

      OMO.#: OMO-TMK325ABJ476MM-P-TAIYO-YUDEN

      		 CAP CER 47UF 25V X5R 1210
      PIC18F4620-I/PT

      Mfr.#: PIC18F4620-I/PT

      OMO.#: OMO-PIC18F4620-I-PT-MICROCHIP-TECHNOLOGY

      		 Microcontrollers - MCU 8-bit Microcontrollers - MCU 64KB 3968 RAM 36 I/O
      EPCQ16ASI8N

      Mfr.#: EPCQ16ASI8N

      OMO.#: OMO-EPCQ16ASI8N-INTEL

      		 Flash Serial 3.3V 16M-bit 8-Pin SOIC Tube
      HMJ325KC7475KMHPE

      Mfr.#: HMJ325KC7475KMHPE

      OMO.#: OMO-HMJ325KC7475KMHPE-TAIYO-YUDEN

      		 CAP CER 4.7UF 100V X7S 1210
      可用性
      库存:
      717
      订购:
      2700
      输入数量:
      IPB530N15N3 G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.58
      US$1.58
      10
      US$1.35
      US$13.50
      100
      US$1.03
      US$103.00
      500
      US$0.92
      US$459.00
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