FDMS86180

FDMS86180
Mfr. #:
FDMS86180
制造商:
ON Semiconductor
描述:
MOSFET N-CH 100V 151A 8PQFN
生命周期:
制造商新产品。
数据表:
FDMS86180 数据表
交货:
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ECAD Model:
更多信息:
FDMS86180 更多信息
产品属性
属性值
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86180
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 151A, 3.2mΩ
***ure Electronics
N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56
***ark
100V/20V N-CHANNEL PTNG MOSFET
***et Europe
N-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
型号 制造商 描述 库存 价格
FDMS86180
DISTI # V36:1790_17091597
ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET0
    FDMS86180
    DISTI # FDMS86180TR-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 3000:$1.6076
    FDMS86180
    DISTI # FDMS86180CT-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180DKR-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180
    ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86180)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 12000:$1.7900
    • 18000:$1.7900
    • 30000:$1.7900
    • 3000:$1.8900
    • 6000:$1.8900
    FDMS86180
    DISTI # 18AC7314
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56,Transistor Polarity:N Channel,Continuous Drain Current Id:151A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes0
    • 1000:$1.5900
    • 500:$1.8800
    • 250:$2.1000
    • 100:$2.2100
    • 50:$2.3300
    • 25:$2.4400
    • 10:$2.5600
    • 1:$3.0100
    FDMS86180
    DISTI # 24AC8554
    ON SemiconductorFET 100V 3.2 MOHM PQFN56 / REEL0
    • 30000:$1.3900
    • 18000:$1.4100
    • 12000:$1.4700
    • 6000:$1.5800
    • 3000:$1.6900
    • 1:$1.7700
    FDMS86180
    DISTI # 512-FDMS86180
    ON SemiconductorMOSFET 100V/20V N-Channel PTNG MOSFET
    RoHS: Compliant
    0
    • 1:$3.0300
    • 10:$2.5800
    • 100:$2.2300
    • 250:$2.1200
    • 500:$1.9000
    • 1000:$1.6000
    • 3000:$1.5200
    FDMS86180
    DISTI # 2762548
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56
    RoHS: Compliant
    0
    • 3000:$2.3400
    • 1000:$2.4600
    • 500:$2.9200
    • 250:$3.2600
    • 100:$3.4300
    • 10:$3.9700
    • 1:$4.6700
    FDMS86180
    DISTI # 2762548
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 560
    • 500:£1.4800
    • 250:£1.6500
    • 100:£1.7300
    • 10:£2.0100
    • 1:£2.6600
    图片 型号 描述
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    Mfr.#: FDMS8670

    OMO.#: OMO-FDMS8670

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    FDMS8558SDC

    Mfr.#: FDMS8558SDC

    OMO.#: OMO-FDMS8558SDC-ON-SEMICONDUCTOR

    MOSFET N-CH 25V 33A 8-PQFN
    FDMS8880

    Mfr.#: FDMS8880

    OMO.#: OMO-FDMS8880-ON-SEMICONDUCTOR

    RF Bipolar Transistors MOSFET 30V N-Channel PowerTrench
    FDMS7660SE

    Mfr.#: FDMS7660SE

    OMO.#: OMO-FDMS7660SE-1190

    全新原装
    FDMS8018

    Mfr.#: FDMS8018

    OMO.#: OMO-FDMS8018-ON-SEMICONDUCTOR

    MOSFET N-CH 30V 30A 8PQFN
    FDMS8460S

    Mfr.#: FDMS8460S

    OMO.#: OMO-FDMS8460S-1190

    全新原装
    FDMS86322_F065

    Mfr.#: FDMS86322_F065

    OMO.#: OMO-FDMS86322-F065-1190

    全新原装
    FDMS8670S

    Mfr.#: FDMS8670S

    OMO.#: OMO-FDMS8670S-ON-SEMICONDUCTOR

    MOSFET N-CH 30V 20A POWER56
    FDMS004N08C

    Mfr.#: FDMS004N08C

    OMO.#: OMO-FDMS004N08C-ON-SEMICONDUCTOR

    MOSFET N-CH 80V 126A 8PQFN
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    FDMS86180的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$2.08
    US$2.08
    10
    US$1.98
    US$19.81
    100
    US$1.88
    US$187.65
    500
    US$1.77
    US$886.15
    1000
    US$1.67
    US$1 668.00
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