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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI4686DY-T1-E3 DISTI # V36:1790_09215583 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4686DY-T1-E3 DISTI # V72:2272_09215583 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 18.2A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 4497In Stock |
|
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 18.2A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 4497In Stock |
|
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 18.2A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3) Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4686DY-T1-E3 DISTI # 69W7202 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 18.2A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4686DY-T1-E3 DISTI # 75M5494 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 18.2A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4686DY-T1-E3 DISTI # 781-SI4686DY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant | 4290 |
|
| SI4686DY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V | Americas - | |
| SI4686DY-T1-E3 | VISHAY INTERTECHNOLOGIES | 604 |
| |
| SI4686DY-T1-E3 DISTI # 2335317 | Vishay Intertechnologies | MOSFET, N CH, 30V, 18.2A, SOIC RoHS: Compliant | 307 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3 |
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V |
|
|
Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3 |
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V |
|
Mfr.#: SI4686DY OMO.#: OMO-SI4686DY-1190 |
全新原装 |
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Mfr.#: SI4686DY-T1 OMO.#: OMO-SI4686DY-T1-1190 |
全新原装 |
|
Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3-VISHAY |
MOSFET N-CH 30V 18.2A 8-SOIC |
|
|
Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3-VISHAY |
MOSFET N-CH 30V 18.2A 8-SOIC |
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Mfr.#: SI4686DY-TI-E3 OMO.#: OMO-SI4686DY-TI-E3-1190 |
全新原装 |