F3L300R12ME4_B22

F3L300R12ME4_B22
Mfr. #:
F3L300R12ME4_B22
制造商:
Infineon Technologies
描述:
IGBT Modules IGBT Module 300A 1200V
生命周期:
制造商新产品。
数据表:
F3L300R12ME4_B22 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT 模块
RoHS:
Y
打包:
托盘
品牌:
英飞凌科技
产品类别:
IGBT 模块
出厂包装数量:
10
子类别:
IGBT
第 # 部分别名:
F3L300R12ME4B22BOSA1 SP000931254
Tags
F3L300R12ME4_B, F3L300R12ME, F3L300R12M, F3L300R1, F3L300, F3L3, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
EconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC
***ronik
IGBT 1200V 450A EconoDUAL3
***i-Key
IGBT MODULE VCES 650V 300A
***omponent
Infineon power module
***et
MEDIUM POWER ECONO
***ineon
EconoDUAL 3 1200V 3-level phase leg IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode and 3-Level NTC1 upper switch. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); Unbeatable Robustness; T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; welding
型号 制造商 描述 库存 价格
F3L300R12ME4B22BOSA1
DISTI # F3L300R12ME4B22BOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 650V 300A
RoHS: Not compliant
Min Qty: 10
Container: Bulk
Temporarily Out of Stock
  • 10:$174.0550
F3L300R12ME4_B22
DISTI # SP000931254
Infineon Technologies AGEconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC (Alt: SP000931254)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€227.2900
  • 10:€183.6900
  • 25:€166.9900
  • 50:€161.2900
  • 100:€155.9900
  • 500:€151.4900
  • 1000:€148.0900
F3L300R12ME4B22BOSA1
DISTI # F3L300R12ME4B22BOSA1
Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: F3L300R12ME4B22BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$180.6900
  • 20:$174.1900
  • 40:$167.8900
  • 60:$162.2900
  • 100:$159.3900
F3L300R12ME4_B22
DISTI # 641-F3L300R12ME4_B22
Infineon Technologies AGIGBT Modules IGBT Module 300A 1200V
RoHS: Compliant
8
  • 1:$181.9300
  • 5:$177.5500
  • 10:$173.1400
  • 25:$170.7200
F3L300R12ME4_B22Infineon Technologies AGInsulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant
315
  • 1000:$151.4700
  • 500:$159.4500
  • 100:$166.0000
  • 25:$173.1100
  • 1:$186.4300
F3L300R12ME4B22BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant
400
  • 1000:$151.4700
  • 500:$159.4500
  • 100:$166.0000
  • 25:$173.1100
  • 1:$186.4300
图片 型号 描述
EYG-S0612ZLWF

Mfr.#: EYG-S0612ZLWF

OMO.#: OMO-EYG-S0612ZLWF

Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
EYG-S0612ZLWF

Mfr.#: EYG-S0612ZLWF

OMO.#: OMO-EYG-S0612ZLWF-PANASONIC

Heat Insulating Sheet
可用性
库存:
Available
订购:
1993
输入数量:
F3L300R12ME4_B22的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$181.93
US$181.93
5
US$177.55
US$887.75
10
US$173.14
US$1 731.40
25
US$170.72
US$4 268.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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