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IRFB4115GPBF

IRFB4115GPBF
Mfr. #:
IRFB4115GPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 150V 104A 11mOhm 77nCAB
生命周期:
制造商新产品。
数据表:
IRFB4115GPBF 数据表
交货:
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支付:
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HTML Datasheet:
IRFB4115GPBF DatasheetIRFB4115GPBF Datasheet (P4-P6)IRFB4115GPBF Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
150 V
Id - 连续漏极电流：
104 A
Rds On - 漏源电阻：
9.3 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
77 nC
Pd - 功耗：
380 W
配置：
单身的
打包：
管子
高度：
15.65 mm
长度：
10 mm
晶体管类型：
1 N-Channel
宽度：
4.4 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
1000
子类别：
MOSFET
第 # 部分别名：
SP001572390
单位重量：
0.211644 oz
Tags
IRFB4115, IRFB411, IRFB41, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
*** Source Electronics
Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 104A TO220AB
***ure Electronics
Single N-Channel 150 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 MOHM, 77 NC QG, TO220AB, HALOGEN-FREE
***ment14 APAC
N CH MOSFET, 150V, 104A, TO-220AB; Trans; N CH MOSFET, 150V, 104A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; MSL:-
***ure Electronics
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
***roFlash
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***eco
Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3+ Tab TO-220AB Tube
***ure Electronics
N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***Yang
Trans MOSFET N-CH 150V 8A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB
*** Electronics
MOSFET 150V 85A 300W 21mohm @ 10V
***
150V N-CH 175 DEG.C RATED TREN
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:150V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.4W; MSL:-
***(Formerly Allied Electronics)
IRFB4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-220AB
*** Source Electronics
Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB
***ure Electronics
Single N-Channel 150V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; N-channel Gate Charge:71nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ineon SCT
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 150V, 83A, 15 MOHM, 72 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 330 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 150V, 83A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 4228; Current Id Max: 83A; Driver Case Style: TO-220AB; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Output Resistance: 0.012ohm; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 150V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V
***ure Electronics
Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ
***ter Electronics
TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRFB4115GPBF
DISTI # 24111165		Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		996
  • 250:$2.1696
  • 100:$2.2848
  • 50:$2.4384
  • 25:$2.5728
  • 6:$3.4272
IRFB4115GPBF
DISTI # 31238418		Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		600
  • 50:$3.0400
IRFB4115GPBF
DISTI # IRFB4115GPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 104A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1149In Stock
  • 1000:$2.7527
  • 500:$3.2640
  • 100:$4.0308
  • 10:$4.9160
  • 1:$5.5100
IRFB4115GPBF
DISTI # C1S322000488571		Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 1000:$2.2400
  • 500:$2.4100
  • 100:$3.1500
  • 50:$3.4300
  • 10:$4.1700
  • 1:$6.4400
IRFB4115GPBF
DISTI # IRFB4115GPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4115GPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.9900
  • 2000:$1.8900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IRFB4115GPBF
DISTI # SP001572390		Infineon Technologies AGTrans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001572390)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.0900
  • 10:€1.9900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.6900
  • 500:€1.6900
  • 1000:€1.5900
IRFB4115GPBF
DISTI # 70019678		Infineon Technologies AGIRFB4115GPBF N-channel MOSFET Transistor,104 A,150 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 200:$4.6400
IRFB4115GPBFInfineon Technologies AG 
RoHS: Not Compliant		100
  • 1000:$2.2200
  • 500:$2.3400
  • 100:$2.4300
  • 25:$2.5400
  • 1:$2.7300
IRFB4115GPBFInfineon Technologies AGSingle N-Channel 150 V 11 mOhm 120 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		1000Tube
  • 5:$3.3800
  • 25:$2.8600
  • 50:$2.7500
  • 250:$2.5300
IRFB4115GPBF
DISTI # 942-IRFB4115GPBF		Infineon Technologies AGMOSFET MOSFT 150V 104A 11mOhm 77nCAB
RoHS: Compliant		446
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.4900
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5100
  • 2000:$2.3800
IRFB4115GPBF
DISTI # 8273953P		Infineon Technologies AGHEXFET N-CH MOSFET 104A 150V TO-220AB, TU32
  • 50:£2.9100
  • 100:£2.5200
  • 250:£2.3900
  • 500:£2.1550
IRFB4115GPBFInternational Rectifier104 A, 150 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB227
  • 86:$2.0280
  • 9:$2.3400
  • 1:$4.6800
IRFB4115GPBF
DISTI # XSFP00000020582		Infineon Technologies AGPower Field-Effect Transistor,120AI(D),75V,0.0058ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
RoHS: Compliant		673
  • 50:$4.5100
  • 673:$4.2200
图片 型号 描述
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF

 Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
EMK212BB7106KG-T

Mfr.#: EMK212BB7106KG-T

OMO.#: OMO-EMK212BB7106KG-T

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 16V X7R 10% 0805
FA28C0G1H471JNU00

Mfr.#: FA28C0G1H471JNU00

OMO.#: OMO-FA28C0G1H471JNU00

 Multilayer Ceramic Capacitors MLCC - Leaded 50V 470pF C0G 5% RAD LS:5mm AEC-Q200
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF-INFINEON-TECHNOLOGIES

 IC MOSFET DVR HI/LO SIDE 14-DIP
B66389GX187

Mfr.#: B66389GX187

OMO.#: OMO-B66389GX187-1161

 EMI/RFI Suppressors & Ferrites Ferrite Cores & Accessories FERRITE CORES & ACCESSORIES
0251.500MAT1L

Mfr.#: 0251.500MAT1L

OMO.#: OMO-0251-500MAT1L-LITTELFUSE

 Fuses with Leads (Through Hole) 125V .5A
UJ31-CH-G2-SMT-TR

Mfr.#: UJ31-CH-G2-SMT-TR

OMO.#: OMO-UJ31-CH-G2-SMT-TR-CUI

 USB jack 3.1, C type, 24 pin, horizonal, gold plating, surface mount, T&R
可用性
库存:
440
订购:
2423
输入数量:
IRFB4115GPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$4.74
US$4.74
10
US$4.03
US$40.30
100
US$3.49
US$349.00
250
US$3.31
US$827.50
500
US$2.97
US$1 485.00
1000
US$2.51
US$2 510.00
2000
US$2.38
US$4 760.00
5000
US$2.29
US$11 450.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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