IPP040N06NAKSA1

Mfr. #:: IPP040N06NAKSA1
制造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 60V 80A TO220-3
生命周期:: 制造商新产品。
数据表:: IPP040N06NAKSA1 数据表
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更多信息:: IPP040N06NAKSA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPP040N06

打包: 管子

部分别名: IPP040N06N IPP040N06NXK SP000959820

单位重量: 0.211644 oz

安装方式: 通孔

商品名: 优化MOS

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 107 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 9 ns

上升时间: 16 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 80 A

Vds-漏-源-击穿电压: 60 V

VGS-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 4 mOhms

晶体管极性: N通道

典型关断延迟时间: 30 ns

典型开启延迟时间: 19 ns

Qg-门电荷: 38 nC

正向跨导最小值: 120 S

Tags: IPP040, IPP04, IPP0, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP040N06NAKSA1 描述

***ical: Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube

***Components: MOSFET N-Channel 60V 80A OptiMOS TO263

***i-Key: MOSFET N-CH 60V 20A TO220-3

***ronik: N-CH 60V 80A 4mOhm TO220-3

***p One Stop Global: OPTIMOSTM POWER-TRANSISTOR

***ark: Mosfet, N-Ch, 60V, 80A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:107W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 60V, 80A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:107W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPP040N06NAKSA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

型号	制造商	描述	库存	价格
IPP040N06NAKSA1 DISTI # V99:2348_06383355	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	206	10000:$0.7310 5000:$0.7571 2500:$0.7836 1000:$0.8292 500:$0.9505 100:$1.0758 10:$1.3153 1:$1.5323
IPP040N06NAKSA1 DISTI # IPP040N06NAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	219In Stock	1000:$0.9570 500:$1.1550 100:$1.4850 10:$1.8480 1:$2.0500
IPP040N06NAKSA1 DISTI # 30313608	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	269	500:$1.0176 100:$1.1520 16:$1.4400
IPP040N06NAKSA1 DISTI # 26197615	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	206	100:$1.0758 10:$1.3153
IPP040N06NAKSA1 DISTI # IPP040N06NAKSA1	Infineon Technologies AG	MV POWER MOS - Rail/Tube (Alt: IPP040N06NAKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.6909 2000:$0.6659 3000:$0.6419 5000:$0.6199 10000:$0.6089
IPP040N06NAKSA1 DISTI # 12AC9723	Infineon Technologies AG	MOSFET, N-CH, 60V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	500	1:$1.7700 10:$1.5000 100:$1.2000 500:$1.0600
IPP040N06N DISTI # 726-IPP040N06N	Infineon Technologies AG	MOSFET N-Ch 60V 80A TO220-3 RoHS: Compliant	749	1:$1.7000 10:$1.4400 100:$1.1600 500:$1.0100
IPP040N06NAKSA1 DISTI # 726-IPP040N06NAKSA1	Infineon Technologies AG	MOSFET N-Ch 60V 80A TO220-3 RoHS: Compliant	559	1:$1.7700 10:$1.5000 100:$1.2000 500:$1.0600
IPP040N06NAKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 20A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	300	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400
IPP040N06NAKSA1 DISTI # 8922144P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, TU	55	10:£1.0780 25:£1.0440 50:£1.0100 100:£0.8700
IPP040N06NAKSA1 DISTI # 8922144	Infineon Technologies AG	MOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, PK	130	5:£1.3760 10:£1.0780 25:£1.0440 50:£1.0100 100:£0.8700
IPP040N06NAKSA1 DISTI # 2709863	Infineon Technologies AG	MOSFET, N-CH, 60V, 80A, TO-220 RoHS: Compliant	500	5:£1.0900 25:£1.0200 100:£0.8790 250:£0.8450 500:£0.8100
IPP040N06NAKSA1 DISTI # 2709863	Infineon Technologies AG	MOSFET, N-CH, 60V, 80A, TO-220 RoHS: Compliant	500	1:$3.2700 10:$2.9500 100:$2.3700 500:$1.8500 1000:$1.5300
IPP040N06NAKSA1 DISTI # C1S322000336366	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	206	100:$1.0758 10:$1.3153

图片	型号	描述
	Mfr.#: IPP040N06NAKSA1 OMO.#: OMO-IPP040N06NAKSA1	MOSFET N-Ch 60V 80A TO220-3
	Mfr.#: IPP040N06N OMO.#: OMO-IPP040N06N	MOSFET N-Ch 60V 80A TO220-3
	Mfr.#: IPP040N06N3GXKSA1 OMO.#: OMO-IPP040N06N3GXKSA1	MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3
	Mfr.#: IPP040N06N3G OMO.#: OMO-IPP040N06N3G-1190	Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPP040N06N3G 040N06N OMO.#: OMO-IPP040N06N3G-040N06N-1190	全新原装
	Mfr.#: IPP040N06N3GXK OMO.#: OMO-IPP040N06N3GXK-1190	60V,90A,N-channel power MOSFET
	Mfr.#: IPP040N06N3GXKSA1 , 2SD2 OMO.#: OMO-IPP040N06N3GXKSA1-2SD2-1190	全新原装
	Mfr.#: IPP040N06N3GHKSA1 OMO.#: OMO-IPP040N06N3GHKSA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 60V 90A TO220-3
	Mfr.#: IPP040N06NAKSA1 OMO.#: OMO-IPP040N06NAKSA1-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 60V 80A TO220-3
	Mfr.#: IPP040N06N3 G OMO.#: OMO-IPP040N06N3-G-126	IGBT Transistors MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3

IPP040N06NAKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes