APT25GP120BDQ1G

APT25GP120BDQ1G
Mfr. #:
APT25GP120BDQ1G
制造商:
Microchip / Microsemi
描述:
IGBT Transistors
生命周期:
制造商新产品。
数据表:
APT25GP120BDQ1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
美高森美公司
产品分类
IGBT - 单
系列
POWER MOS 7R
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247 [B]
配置
单身的
最大功率
417W
反向恢复时间trr
-
电流收集器 Ic-Max
69A
电压收集器发射极击穿最大值
1200V
IGBT型
PT
电流收集器脉冲Icm
90A
Vce-on-Max-Vge-Ic
3.9V @ 15V, 25A
开关能源
500μJ (on), 440μJ (off)
栅极电荷
110nC
Td-on-off-25°C
12ns/70ns
测试条件
600V, 25A, 5 Ohm, 15V
钯功耗
417 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
1.2 kV
集电极-发射极-饱和-电压
3.3 V
25-C 时的连续集电极电流
69 A
栅极-发射极-漏电流
100 nA
最大栅极发射极电压
30 V
连续集电极电流 Ic-Max
69 A
Tags
APT25GP120BD, APT25GP1, APT25GP, APT25G, APT25, APT2, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
APT25GP120BDQ1G
DISTI # V99:2348_09096241
Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 69A 3-Pin(3+Tab) TO-247
RoHS: Compliant
0
  • 500:$8.2520
  • 250:$8.9060
  • 100:$9.7710
  • 25:$10.3480
  • 10:$11.1280
  • 1:$12.1430
APT25GP120BDQ1G
DISTI # APT25GP120BDQ1G-ND
Microsemi CorporationIGBT 1200V 69A 417W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 500:$9.0226
  • 100:$10.5783
  • 25:$11.5116
  • 10:$12.4450
  • 1:$13.6900
APT25GP120BDQ1G
DISTI # APT25GP120BDQ1G
Microchip Technology IncTrans IGBT Chip N-CH 1.2KV 69A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT25GP120BDQ1G)
RoHS: Compliant
Min Qty: 44
Container: Tube
Americas - 0
  • 440:$7.2900
  • 220:$7.3900
  • 132:$7.6900
  • 88:$7.8900
  • 44:$8.1900
APT25GP120BDQ1G
DISTI # 494-APT25GP120BDQ1G
Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
RoHS: Compliant
0
  • 1:$12.7800
  • 10:$11.6200
  • 25:$10.7500
  • 50:$10.1600
  • 100:$9.8700
  • 250:$9.0000
  • 500:$8.4200
  • 1000:$7.7200
APT25GP120BDQ1G
DISTI # APT25GP120BDQ1G
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
  • 44:$7.7800
  • 100:$7.5700
  • 500:$7.4800
图片 型号 描述
APT25GP120BDQ1G

Mfr.#: APT25GP120BDQ1G

OMO.#: OMO-APT25GP120BDQ1G

IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
APT25GP120BG

Mfr.#: APT25GP120BG

OMO.#: OMO-APT25GP120BG

IGBT Transistors FG, IGBT, 1200V, 25A, TO-247, RoHS
APT25GP90BDQ1G

Mfr.#: APT25GP90BDQ1G

OMO.#: OMO-APT25GP90BDQ1G-MICROSEMI

IGBT Transistors
APT25GP120BDQ1G

Mfr.#: APT25GP120BDQ1G

OMO.#: OMO-APT25GP120BDQ1G-MICROSEMI

IGBT Transistors
APT25GP120B

Mfr.#: APT25GP120B

OMO.#: OMO-APT25GP120B-1190

全新原装
APT25GP120BDF1

Mfr.#: APT25GP120BDF1

OMO.#: OMO-APT25GP120BDF1-1190

全新原装
APT25GP120BDQ1

Mfr.#: APT25GP120BDQ1

OMO.#: OMO-APT25GP120BDQ1-1190

全新原装
APT25GP90BDF1

Mfr.#: APT25GP90BDF1

OMO.#: OMO-APT25GP90BDF1-1190

全新原装
可用性
库存:
Available
订购:
5000
输入数量:
APT25GP120BDQ1G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$10.94
US$10.94
10
US$10.39
US$103.88
100
US$9.84
US$984.15
500
US$9.29
US$4 647.40
1000
US$8.75
US$8 748.00
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