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IKA08N65H5XKSA1

IKA08N65H5XKSA1
Mfr. #:
IKA08N65H5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IKA08N65H5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IKA08N65H5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220FP-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.65 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
10.8 A
Pd - 功耗：
31.2 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
500
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKA08N65H5 SP001001722
单位重量：
0.211644 oz
Tags
IKA08, IKA0, IKA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 500, Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***et Europe
Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube
***i-Key
IGBT 650V 10.8A 31.2W PG-TO220-3
***ronik
IGBT 650V 8A 1,65V TO220FP-3
***ark
IGBT, 650V, 8A, TO220-3
***ukat
650V 10,8A 31,2W TO220-Fullpak
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型号 制造商 描述 库存 价格
IKA08N65H5XKSA1
DISTI # IKA08N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 10.8A 31.2W PG-TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		400In Stock
  • 1000:$1.0781
  • 500:$1.3011
  • 100:$1.5837
  • 10:$1.9700
  • 1:$2.1900
IKA08N65H5XKSA1
DISTI # IKA08N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.0199
  • 1000:$0.9829
  • 2000:$0.9469
  • 3000:$0.9159
  • 5000:$0.8989
IKA08N65H5XKSA1
DISTI # SP001001722		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP001001722)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1109
  • 10:€1.0099
  • 25:€0.9259
  • 50:€0.8879
  • 100:€0.8539
  • 500:€0.8229
  • 1000:€0.7929
IKA08N65H5
DISTI # 726-IKA08N65H5		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		423
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9560
  • 5000:$0.9210
IKA08N65H5XKSA1
DISTI # 726-IKA08N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		386
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9560
  • 5000:$0.9210
IKA08N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		3990
  • 1000:$0.9400
  • 500:$0.9900
  • 100:$1.0300
  • 25:$1.0800
  • 1:$1.1600
IKA08N65H5XKSA1
DISTI # IKA08N65H5		Infineon Technologies AG650V 10,8A 31,2W TO220-Fullpak
RoHS: Compliant		455
  • 1:€4.9400
  • 10:€1.9400
  • 50:€0.9400
  • 100:€0.8600
图片 型号 描述
1ED020I12-F2

Mfr.#: 1ED020I12-F2

OMO.#: OMO-1ED020I12-F2

 Gate Drivers DRIVER IC
1ED020I12-F2

Mfr.#: 1ED020I12-F2

OMO.#: OMO-1ED020I12-F2-91

 Gate Drivers DRIVER IC
可用性
库存:
386
订购:
2369
输入数量:
IKA08N65H5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.08
US$2.08
10
US$1.77
US$17.70
100
US$1.41
US$141.00
500
US$1.24
US$620.00
1000
US$1.02
US$1 020.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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