SIHD1K4N60E-GE3

SIHD1K4N60E-GE3
Mfr. #:
SIHD1K4N60E-GE3
制造商:
Vishay
描述:
E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V
生命周期:
制造商新产品。
数据表:
SIHD1K4N60E-GE3 数据表
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SIHD1K4N60E-GE3 更多信息
产品属性
属性值
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHD1K4N60E-GE3
DISTI # V99:2348_22712079
Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 10:$1.0531
  • 1:$1.2277
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3-ND
Vishay SiliconixMOSFET N-CH DPAK TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk
3015In Stock
  • 5000:$0.4678
  • 2500:$0.4924
  • 1000:$0.5276
  • 500:$0.6683
  • 100:$0.8090
  • 10:$1.0380
  • 1:$1.1600
SIHD1K4N60E-GE3
DISTI # 33076649
Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 14:$1.0531
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIHD1K4N60E-GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$0.4289
  • 12000:$0.4409
  • 8000:$0.4529
  • 4000:$0.4729
  • 2000:$0.4869
SIHD1K4N60E-GE3
DISTI # 99AC9554
Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes45
  • 500:$0.6430
  • 250:$0.6960
  • 100:$0.7480
  • 50:$0.8240
  • 25:$0.8990
  • 10:$0.9750
  • 1:$1.1800
SIHD1K4N60E-GE3
DISTI # 78-SIHD1K4N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
3000
  • 1:$1.1700
  • 10:$0.9650
  • 100:$0.7410
  • 500:$0.6370
  • 1000:$0.5030
  • 2500:$0.4690
  • 5000:$0.4460
  • 10000:$0.4290
SIHD1K4N60E-GE3
DISTI # 3019080
Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-25245
  • 500:£0.4620
  • 250:£0.5000
  • 100:£0.5370
  • 10:£0.7530
  • 1:£0.9690
SIHD1K4N60E-GE3
DISTI # 3019080
Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252
RoHS: Compliant
45
  • 1000:$0.5930
  • 500:$0.7490
  • 250:$0.8380
  • 100:$0.9230
  • 25:$1.2500
  • 5:$1.3700
图片 型号 描述
SIHD1K4N60E-GE3

Mfr.#: SIHD1K4N60E-GE3

OMO.#: OMO-SIHD1K4N60E-GE3

MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD1K4N60E-GE3

Mfr.#: SIHD1K4N60E-GE3

OMO.#: OMO-SIHD1K4N60E-GE3-VISHAY

E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V
可用性
库存:
Available
订购:
3500
输入数量:
SIHD1K4N60E-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
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单价
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1
US$0.00
US$0.00
10
US$0.00
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100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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