IPP60R280E6

IPP60R280E6
Mfr. #:
IPP60R280E6
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
生命周期:
制造商新产品。
数据表:
IPP60R280E6 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
13.8 A
Rds On - 漏源电阻:
250 mOhms
Vgs - 栅源电压:
20 V
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
104 W
配置:
单身的
商品名:
酷摩
打包:
管子
高度:
15.65 mm
长度:
10 mm
系列:
CoolMOS E6
晶体管类型:
1 N-Channel
宽度:
4.4 mm
品牌:
英飞凌科技
产品类别:
MOSFET
出厂包装数量:
500
子类别:
MOSFET
第 # 部分别名:
IPP60R280E6XKSA1 IPP6R28E6XK SP000797290
单位重量:
0.211644 oz
Tags
IPP60R280E, IPP60R28, IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
型号 制造商 描述 库存 价格
IPP60R280E6XKSA1
DISTI # IPP60R280E6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 13.8A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.5683
IPP60R280E6
DISTI # SP000797290
Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin TO-220 Tube (Alt: SP000797290)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.5069
  • 10:€1.1709
  • 25:€1.0869
  • 50:€1.0529
  • 100:€1.0349
  • 500:€1.0259
  • 1000:€1.0119
IPP60R280E6XK
DISTI # IPP60R280E6XKSA1
Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP60R280E6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.1729
  • 1000:$1.1309
  • 2000:$1.0899
  • 3000:$1.0529
  • 5000:$1.0349
IPP60R280E6
DISTI # 726-IPP60R280E6
Infineon Technologies AGMOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
RoHS: Compliant
370
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
IPP60R280E6Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
1351
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPP60R280E6XKSA1
DISTI # IPP60R280E6
Infineon Technologies AGN-Ch 600V 13,8A 104W 0,28R TO220
RoHS: Compliant
450
  • 1:€5.1000
  • 10:€2.1000
  • 50:€1.1000
  • 100:€1.0000
图片 型号 描述
SMAJ6.5CA

Mfr.#: SMAJ6.5CA

OMO.#: OMO-SMAJ6-5CA

TVS Diodes / ESD Suppressors 400W 6.5V 5% Bi-Directional
BD140

Mfr.#: BD140

OMO.#: OMO-BD140

Bipolar Transistors - BJT PNP Audio Amplfier
BD139

Mfr.#: BD139

OMO.#: OMO-BD139

Bipolar Transistors - BJT NPN Audio Amplifier
FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P

MOSFET SC70-6 P-CH -30V
SMAJ6.5CA

Mfr.#: SMAJ6.5CA

OMO.#: OMO-SMAJ6-5CA-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 6.5volts 500/1000uA 35.7 Amps Bi-Di
RGA101M1CBK-0611G

Mfr.#: RGA101M1CBK-0611G

OMO.#: OMO-RGA101M1CBK-0611G-1130

Aluminum Electrolytic Capacitors - Leaded 16V 100uF 105C 6.3x11mm
RGA101M1EBK-0611G

Mfr.#: RGA101M1EBK-0611G

OMO.#: OMO-RGA101M1EBK-0611G-1130

Aluminum Electrolytic Capacitors - Leaded 25V 100uF 105C 6.3x11mm
RGA101M1VBK-0811G

Mfr.#: RGA101M1VBK-0811G

OMO.#: OMO-RGA101M1VBK-0811G-1130

Aluminum Electrolytic Capacitors - Leaded 35V 100uF 105C 8x11.5mm
FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR

MOSFET P-CH 30V 1.6A SC70-6
55J1K0E

Mfr.#: 55J1K0E

OMO.#: OMO-55J1K0E-OHMITE

Wirewound Resistors - Through Hole 5W 1K Ohm 5%
可用性
库存:
354
订购:
2337
输入数量:
IPP60R280E6的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.39
US$2.39
10
US$2.03
US$20.30
100
US$1.63
US$163.00
500
US$1.42
US$710.00
1000
US$1.18
US$1 180.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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