We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SPP11N60S5XKSA1 DISTI # SPP11N60S5XKSA1-ND | Infineon Technologies AG | LOW POWER_LEGACY RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call |
|
| SPP11N60S5HKSA1 DISTI # SPP11N60S5HKSA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 11A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| SPI11N60S5BKSA1 DISTI # SPI11N60S5BKSA1-ND | Infineon Technologies AG | MOSFET N-CH 600V 11A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| SPW11N60S5FKSA1 DISTI # SPW11N60S5FKSA1-ND | Infineon Technologies AG | MOSFET N-CH 600V 11A TO-247 RoHS: Compliant Min Qty: 240 Container: Tube | Limited Supply - Call | |
| SPB11N60S5ATMA1 DISTI # SPB11N60S5ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 11A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB11N60S5ATMA1 DISTI # SPB11N60S5ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 11A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPB11N60S5ATMA1 DISTI # SPB11N60S5ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 11A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SPP11N60S5 DISTI # SPP11N60S5 | Infineon Technologies AG | Trans MOSFET N-CH 600V 11A 3-Pin TO-220 Tube (Alt: SPP11N60S5) RoHS: Compliant Min Qty: 500 Container: Tube | Asia - 0 |
|
| SPI11N60S5 DISTI # SPI11N60S5 | Infineon Technologies AG | - Bulk (Alt: SPI11N60S5) Min Qty: 313 Container: Bulk | Americas - 0 |
|
| SPW11N60S5 DISTI # SPW11N60S5 | Infineon Technologies AG | Trans MOSFET N-CH 600V 11A 3-Pin TO-247 Tube - Bulk (Alt: SPW11N60S5) RoHS: Not Compliant Min Qty: 166 Container: Bulk | Americas - 0 |
|
| SPP11N60S5 DISTI # SP000681044 | Infineon Technologies AG | Trans MOSFET N-CH 600V 11A 3-Pin TO-220 Tube (Alt: SP000681044) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 0 |
|
| SPP11N60S5XK DISTI # SPP11N60S5XKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP11N60S5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| SPP11N60S5XKSA1. DISTI # 32AC3514 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):380mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power Dissipation Pd:125W,No. of Pins:3Pins | 0 |
|
| SPP11N60S5XKSA1 DISTI # 726-SPP11N60S5XKSA1 | Infineon Technologies AG | MOSFET N-Ch 600V 11A TO220-3 RoHS: Compliant | 500 |
|
| SPB11N60S5ATMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| SPP11N60S5 DISTI # 726-SPP11N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 11A TO220-3 CoolMOS S5 RoHS: Compliant | 0 | |
| SPI11N60S5 DISTI # 726-SPI11N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 RoHS: Compliant | 0 | |
| SPW11N60S5 DISTI # 726-SPW11N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 11A TO247-3 CoolMOS S5 RoHS: Compliant | 0 | |
| SPB11N60S5 DISTI # 726-SPB11N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 RoHS: Compliant | 0 | |
| SPI11N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 368 |
|
| SPW11N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | 16091 |
|
| SPP11N60S5 | Infineon Technologies AG | 140 |
| |
| SPW11N60S5 | Infineon Technologies AG | 234 | ||
| SPP11N60S5XKSA1 DISTI # SPP11N60S5 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,600V,11A,125W,PG-TO220-3 | 143 |
|
| SPU01N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 580 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: 1N6840U3 OMO.#: OMO-1N6840U3 |
Schottky Diodes & Rectifiers Schottky |
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Mfr.#: 1N6119 OMO.#: OMO-1N6119 |
Zener Diodes T MET BI 500W 32.4V |
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Mfr.#: 1N6662US/TR OMO.#: OMO-1N6662US-TR |
Rectifiers Rectifier |
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Mfr.#: 1N6110AJAN OMO.#: OMO-1N6110AJAN-1190 |
Diode TVS Single Bi-Direction 11.4V 500W 2-Pin Case B Bag - Bag (Alt: JAN1N6110A) |
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Mfr.#: 1N6633CUSJAN OMO.#: OMO-1N6633CUSJAN-1190 |
Diode Zener Single 3.6V 2% 5W 2-Pin E-Case SMD - Bag (Alt: JAN1N6633CUS) |
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Mfr.#: 1N6048AJANTX OMO.#: OMO-1N6048AJANTX-1190 |
1500W Bi-Directional TVS Diode 22.8VDC Minimum Breakdown Voltage 20VDC Working Peak Reverse Voltage 33.2V Maximum Clamping Voltage 45A Maximum Peak Pulse Current 0.094%/°C Maximum Temperature Co-effic |
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Mfr.#: 1N60L-B OMO.#: OMO-1N60L-B-1190 |
全新原装 |
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Mfr.#: 1N6206A36PG OMO.#: OMO-1N6206A36PG-1190 |
全新原装 |
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Mfr.#: 1N65L-TM3-T OMO.#: OMO-1N65L-TM3-T-1190 |
全新原装 |
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Mfr.#: 1N6304 OMO.#: OMO-1N6304-MICROSEMI |
Rectifiers Ultra Fast Rectifier (less than 100ns) |