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IRFB3306PBF

IRFB3306PBF
Mfr. #:
IRFB3306PBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
生命周期:
制造商新产品。
数据表:
IRFB3306PBF 数据表
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HTML Datasheet:
IRFB3306PBF DatasheetIRFB3306PBF Datasheet (P4-P6)IRFB3306PBF Datasheet (P7-P9)IRFB3306PBF Datasheet (P10-P12)
ECAD Model:
更多信息:
IRFB3306PBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
160 A
Rds On - 漏源电阻：
3.3 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
85 nC
Pd - 功耗：
230 W
配置：
单身的
打包：
管子
高度：
15.65 mm
长度：
10 mm
晶体管类型：
1 N-Channel
宽度：
4.4 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
1000
子类别：
MOSFET
第 # 部分别名：
SP001556002
单位重量：
0.211644 oz
Tags
IRFB3306P, IRFB3306, IRFB330, IRFB33, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
型号 制造商 描述 库存 价格
IRFB3306PBF
DISTI # 26749318		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube4463
  • 6000:$0.5726
  • 3000:$0.5769
  • 1300:$0.5970
  • 700:$0.6191
  • 600:$0.6421
IRFB3306PBF
DISTI # IRFB3306PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1989In Stock
  • 1000:$1.0371
  • 500:$1.2288
  • 100:$1.5484
  • 50:$1.7082
  • 1:$2.0900
IRFB3306PBF
DISTI # C1S327400165503		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		170
  • 50:$0.7080
  • 10:$0.8300
  • 5:$0.8900
IRFB3306PBF
DISTI # C1S322000488386		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4463
  • 2000:$0.7300
  • 1000:$0.7870
  • 500:$1.0200
  • 100:$1.1100
  • 25:$1.3600
  • 5:$1.6700
IRFB3306PBF
DISTI # V99:2348_13890250		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube1199
  • 2000:$0.6575
  • 1000:$0.7206
  • 500:$0.8895
  • 100:$1.0046
  • 10:$1.1895
  • 1:$1.3655
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3306PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 1000
  • 1000:$0.7201
  • 2000:$0.6905
  • 3000:$0.6812
  • 5000:$0.6546
  • 10000:$0.6462
  • 25000:$0.6301
  • 50000:$0.6147
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3306PBF)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 550
  • 600:$0.6689
  • 700:$0.6449
  • 1300:$0.6219
  • 3000:$0.6009
  • 6000:$0.5899
IRFB3306PBF
DISTI # SP001556002		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB (Alt: SP001556002)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1:€0.9869
  • 10:€0.8769
  • 25:€0.7899
  • 50:€0.7179
  • 100:€0.6579
  • 500:€0.6069
  • 1000:€0.5639
IRFB3306PBF
DISTI # 61M6828		Infineon Technologies AGMOSFET, N, 60V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes239
  • 1:$1.5200
  • 10:$1.2900
  • 100:$1.0400
  • 500:$0.9580
  • 1000:$0.8580
  • 2500:$0.6970
  • 5000:$0.6740
IRFB3306PBF
DISTI # 70017949		Infineon Technologies AGMOSFET,N Ch.,60V,160A,4.2 MOHM,85 NC QG,TO-220AB,Pb-Free
RoHS: Compliant		0
  • 1:$3.1400
  • 10:$2.7700
  • 100:$2.4200
  • 500:$2.1000
  • 1000:$1.8500
IRFB3306PBF
DISTI # 942-IRFB3306PBF		Infineon Technologies AGMOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
RoHS: Compliant		1844
  • 1:$1.7100
  • 10:$1.4600
  • 100:$1.1700
  • 500:$1.0200
  • 1000:$0.8430
  • 2000:$0.7850
IRFB3306PBF
DISTI # 6886910P		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU10644
  • 26:£0.8750
IRFB3306PBF
DISTI # 1249003		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU1700
  • 50:£1.0100
  • 250:£0.7890
  • 1000:£0.5670
  • 2500:£0.5280
IRFB3306PBF
DISTI # 6886910		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, PK180
  • 2:£1.2450
  • 26:£0.8750
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,160A,230W,TO220AB448
  • 1:$1.2700
  • 3:$1.1600
  • 10:$0.9400
  • 100:$0.8300
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGN-Ch 60V 120A 230W 0,0042R TO220AB
RoHS: Compliant		1090
  • 10:€0.9475
  • 50:€0.7075
  • 200:€0.6475
  • 500:€0.6235
IRFB3306PBFInfineon Technologies AGINSTOCK621
    IRFB3306PBF
    DISTI # XSLY00000006704    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1440
    • 950:$0.7429
    • 1440:$0.6933
    IRFB3306PBF
    DISTI # XSFP00000008941    		Infineon Technologies AGPowerField-EffectTransistor,173AI(D),60V,0.0033ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
    RoHS: Compliant    		108319
    • 150:$1.6000
    • 108319:$1.4500
    IRFB3306PBF
    DISTI # 1436951    		Infineon Technologies AGMOSFET, N, 60V, TO-220AB
    RoHS: Compliant    		239
    • 1:$2.7100
    • 10:$2.3200
    • 100:$1.8500
    • 500:$1.6200
    • 1000:$1.3400
    • 2500:$1.2400
    IRFB3306PBFInfineon Technologies AG60V,4.2m,160A,N-Channel Power MOSFET500
    • 1:$1.2500
    • 100:$1.0400
    • 500:$0.9200
    • 1000:$0.9000
    IRFB3306PBF
    DISTI # 1436951    		Infineon Technologies AGMOSFET, N, 60V, TO-220AB
    RoHS: Compliant    		489
    • 5:£1.2100
    • 25:£0.8840
    • 100:£0.8410
    • 250:£0.7970
    • 500:£0.7800
    图片 型号 描述
    24CW1280T-I/ST

    Mfr.#: 24CW1280T-I/ST

    OMO.#: OMO-24CW1280T-I-ST

    		 EEPROM 128 Kbit I2C Serial EEPROM with Software Write Protection, Industrial Temp
    STM32H743BIT6

    Mfr.#: STM32H743BIT6

    OMO.#: OMO-STM32H743BIT6

    		 ARM Microcontrollers - MCU High-performance and DSP with DP-FPU, ARM Cortex-M7 MCU with 2MBytes Flash, 1MB RAM, 400 MHz CPU, Art Accelerator, L1 cache, external memory interface, large set of peripher
    C1206C102KARECAUTO

    Mfr.#: C1206C102KARECAUTO

    OMO.#: OMO-C1206C102KARECAUTO

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 1000pF X7R 1206 10% AEC-Q200
    STM32H743BIT6

    Mfr.#: STM32H743BIT6

    OMO.#: OMO-STM32H743BIT6-STMICROELECTRONICS

    		 IC MCU 32BIT 2MB FLASH 208LQFP
    24CW1280T-I/ST

    Mfr.#: 24CW1280T-I/ST

    OMO.#: OMO-24CW1280T-I-ST-MICROCHIP-TECHNOLOGY

    		 全新原装
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    IRFB3306PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.71
    US$1.71
    10
    US$1.45
    US$14.50
    100
    US$1.16
    US$116.00
    500
    US$1.01
    US$505.00
    1000
    US$0.84
    US$843.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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