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IXTQ44N50P

IXTQ44N50P
Mfr. #:
IXTQ44N50P
制造商:
Littelfuse
描述:
MOSFET 44 Amps 500V 0.14 Ohm Rds
生命周期:
制造商新产品。
数据表:
IXTQ44N50P 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTQ44N50P DatasheetIXTQ44N50P Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-3P-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
500 V
Id - 连续漏极电流：
44 A
Rds On - 漏源电阻：
140 mOhms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
650 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
20.3 mm
长度：
15.8 mm
系列：
IXTQ44N50
晶体管类型：
1 N-Channel
宽度：
4.9 mm
品牌：
IXYS
秋季时间：
21 ns
产品类别：
MOSFET
上升时间：
27 ns
出厂包装数量：
30
子类别：
MOSFET
典型关断延迟时间：
75 ns
典型的开启延迟时间：
25 ns
单位重量：
0.194007 oz
Tags
IXTQ44, IXTQ4, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 500V 44A TO-3P
***el Nordic
Contact for details
***nell
MOSFET, N, TO-3P; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:44A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; N-channel Gate Charge:98nC; No. of Pins:3; Power, Pd:650W; Thermal Resistance, Junction to Case A:0.19°C/W; Typ Capacitance Ciss:5440pF; Voltage, Vds Max:500V; Time, trr Max:400ns
***emi
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
*** Source Electronics
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
***nell
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
***emi
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
***eco
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247
***ure Electronics
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***p One Stop
Trans MOSFET N-CH 560V 32A 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:560V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:284W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:32A; Current Id Max:32A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:284W; Power Dissipation Pd:284W; Power Dissipation Ptot Max:284W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds:560V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***p One Stop Global
Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
IC SUPERVISOR 2 CHANNEL SOT23-5
***S
French Electronic Distributor since 1988
型号 制造商 描述 库存 价格
IXTQ44N50P
DISTI # IXTQ44N50P-ND		IXYS CorporationMOSFET N-CH 500V 44A TO-3P
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$7.8700
IXTQ44N50P
DISTI # 747-IXTQ44N50P		IXYS CorporationMOSFET 44 Amps 500V 0.14 Ohm Rds
RoHS: Compliant		35
  • 1:$10.0300
  • 10:$9.0300
  • 25:$7.5100
  • 50:$6.9800
  • 100:$6.8200
  • 250:$6.2300
  • 500:$5.6800
  • 1000:$5.4200
图片 型号 描述
IXTQ44N50P

Mfr.#: IXTQ44N50P

OMO.#: OMO-IXTQ44N50P

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可用性
库存:
35
订购:
2018
输入数量:
IXTQ44N50P的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$10.03
US$10.03
10
US$9.03
US$90.30
25
US$7.51
US$187.75
50
US$6.98
US$349.00
100
US$6.82
US$682.00
250
US$6.23
US$1 557.50
500
US$5.68
US$2 840.00
1000
US$5.42
US$5 420.00
2500
US$4.64
US$11 600.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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