DMC31D5UDJ-7B

Mfr. #:: DMC31D5UDJ-7B
制造商:: Diodes Incorporated
描述:: MOSFET MOSFET BVDSS: 25V-30V
生命周期:: 制造商新产品。
数据表:: DMC31D5UDJ-7B 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 二极管公司

产品分类: FET - 阵列

系列: DMC31

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

包装盒: SOT-963

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: SOT-963

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 350mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 22.6pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 220mA, 200mA

Rds-On-Max-Id-Vgs: 1.5 Ohm @ 100mA, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 0.38nC @ 4.5V

钯功耗: 350 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 7.5 ns 8.7 ns

上升时间: 2.2 ns 5.2 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 220 mA - 200 mA

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 2.3 Ohms 5.1 Ohms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 21 ns 18.8 ns

典型开启延迟时间: 3.2 ns 3.5 ns

Qg-门电荷: 0.38 nC 0.35 nC

通道模式: 增强

Tags: DMC31D5UDJ, DMC31D, DMC31, DMC3, DMC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMC31D5UDJ-7B 描述

***et: Transistor MOSFET Array Dual N-Channel/P-Channel 30V 220mA/200mA 6-Pin SOT-963 T/R

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 12±V VGS

***ical: Trans MOSFET N/P-CH 30V 0.22A/0.2A 6-Pin SOT-963 T/R

Market price

型号	制造商	描述	库存	价格
DMC31D5UDJ-7B DISTI # DMC31D5UDJ-7BDICT-ND	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10226In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
DMC31D5UDJ-7B DISTI # DMC31D5UDJ-7BDIDKR-ND	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10226In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
DMC31D5UDJ-7B DISTI # DMC31D5UDJ-7BDITR-ND	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	10000In Stock	10000:$0.1336
DMC31D5UDJ-7B DISTI # DMC31D5UDJ-7B	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT963 T&R 10K - Tape and Reel (Alt: DMC31D5UDJ-7B) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.1129 20000:$0.1069 40000:$0.1019 60000:$0.0969 100000:$0.0949
DMC31D5UDJ-7B DISTI # 621-DMC31D5UDJ-7B	Diodes Incorporated	MOSFET MOSFET BVDSS: 25V-30V RoHS: Compliant	6781	1:$0.4000 10:$0.3250 100:$0.1990 1000:$0.1540 2500:$0.1310
DMC31D5UDJ-7 DISTI # 621-DMC31D5UDJ-7	Diodes Incorporated	MOSFET 30V N & P Enh FET Low RDSon 22.2pF RoHS: Compliant	0	1:$0.4000 10:$0.3250 100:$0.1990 1000:$0.1540 2500:$0.1310

图片	型号	描述
	Mfr.#: DMC31D5UDJ-7 OMO.#: OMO-DMC31D5UDJ-7	MOSFET 30V N & P Enh FET Low RDSon 22.2pF
	Mfr.#: DMC31D5UDJ-7B OMO.#: OMO-DMC31D5UDJ-7B	MOSFET MOSFET BVDSS: 25V-30V
	Mfr.#: DMC31D5UDA-7B OMO.#: OMO-DMC31D5UDA-7B	MOSFET MOSFET BVDSS: 25V-30V
	Mfr.#: DMC31D5UDJ-7B OMO.#: OMO-DMC31D5UDJ-7B-DIODES	MOSFET MOSFET BVDSS: 25V-30V
	Mfr.#: DMC31D5UDJ OMO.#: OMO-DMC31D5UDJ-1190	全新原装
	Mfr.#: DMC31D5UDJ-7 OMO.#: OMO-DMC31D5UDJ-7-DIODES	MOSFET N/P-CH 30V SOT963

DMC31D5UDJ-7B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes