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A2G35S200-01SR3

A2G35S200-01SR3
Mfr. #:
A2G35S200-01SR3
制造商:
NXP / Freescale
描述:
RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
生命周期:
制造商新产品。
数据表:
A2G35S200-01SR3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2G35S200-01SR3 DatasheetA2G35S200-01SR3 Datasheet (P4-P6)A2G35S200-01SR3 Datasheet (P7-P9)A2G35S200-01SR3 Datasheet (P10)
ECAD Model:
更多信息:
A2G35S200-01SR3 更多信息
产品属性
属性值
制造商：
马科姆
产品分类：
射频放大器
RoHS：
Y
安装方式：
贴片/贴片
包装/案例：
PQFN-20
类型：
2-Stage Amplifier
工作频率：
2.5 GHz to 3.5 GHz
获得：
27 dB
工作电源电压：
11 V
工作电源电流：
25 mA
最高工作温度：
+ 85 C
打包：
卷轴
品牌：
马科姆
产品类别：
射频放大器
出厂包装数量：
500
子类别：
无线和射频集成电路
Tags
A2G3, A2G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR
***W
RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828
***et
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
型号 制造商 描述 库存 价格
A2G35S200-01SR3
DISTI # 568-15206-1-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-6-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-2-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$123.4358
A2G35S200-01SR3
DISTI # 01AC8235		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V0
  • 100:$116.0200
  • 50:$123.4400
  • 25:$125.3000
  • 10:$127.1500
  • 5:$130.8600
  • 1:$134.5800
A2G35S200-01SR3
DISTI # 841-A2G35S200-01SR3		NXP SemiconductorsRF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant		0
  • 250:$139.2100
图片 型号 描述
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3

 RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3-NXP-SEMICONDUCTORS

 AIRFAST RF POWER GAN TRANSISTOR
可用性
库存:
Available
订购:
1000
输入数量:
A2G35S200-01SR3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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