FGPF10N60UNDF

FGPF10N60UNDF
Mfr. #:
FGPF10N60UNDF
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V, 10A Short Circuit Rated IGBT
生命周期:
制造商新产品。
数据表:
FGPF10N60UNDF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGPF10N60UNDF 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-220F
安装方式:
通孔
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
2 V
25 C 时的连续集电极电流:
20 A
Pd - 功耗:
17 W
系列:
FGPF10N60UNDF
打包:
管子
品牌:
安森美半导体/飞兆半导体
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
单位重量:
0.080072 oz
Tags
FGPF1, FGPF, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
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Trans IGBT Chip N-CH 600V 20A 139000mW 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
FGP10N60UNDF Series 600 V 20 A N-Ch Short Circuit Rated IGBT - TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
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Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 14.3A 34000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
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600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
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IRG4IBC20FD Series 600 V 14.3 A Through Hole Fast CoPack IGBT - TO-220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Copacked 600V IGBT in a TO-220 FullPak package with ultrafast 1-8 kHz ultrafast,ultrasoft recovery antiparallel diode, TO-220-3 FP, RoHS
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:14.3A; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:14.3A; Package / Case:TO-220FP; Power Dissipation Max:34W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
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16 A, 600 V low drop IGBT with soft and fast recovery diode
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STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
***nell
IGBT, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
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N-CHANNEL IGBT
FGPF1XN60 Short Circuit Rated IGBTs
ON Semiconductor's FGPF1XN60 Short Circuit Rated IGBTs use advanced NPT IGBT Technology, which offers the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential. These IGBTs feature short circuit rating of 10µs, high current capability, high input impedance, and fast switching. These devices are ideal for home applicances inverter-driven applications (air conditioner, washing machine, refrigerators, dish washer) and industrial inverter applications (sewing machine and CNC).Learn More
型号 制造商 描述 库存 价格
FGPF10N60UNDF
DISTI # V36:1790_06339515
ON Semiconductor600V 10A NPT IGBT340
  • 10000:$0.8507
  • 5000:$0.8844
  • 2000:$0.9181
  • 1000:$0.9696
  • 500:$1.1353
  • 100:$1.2647
  • 10:$1.5573
  • 1:$1.8129
FGPF10N60UNDF
DISTI # FGPF10N60UNDF-ND
ON SemiconductorIGBT 600V 20A 42W TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube
999In Stock
  • 1000:$1.0370
  • 500:$1.2515
  • 100:$1.5233
  • 10:$1.8950
  • 1:$2.1100
FGPF10N60UNDF
DISTI # 26762816
ON Semiconductor600V 10A NPT IGBT340
  • 10000:$0.8507
  • 5000:$0.8844
  • 2000:$0.9181
  • 1000:$0.9696
  • 500:$1.1353
  • 100:$1.2647
  • 10:$1.5573
  • 8:$1.8129
FGPF10N60UNDF
DISTI # FGPF10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube - Rail/Tube (Alt: FGPF10N60UNDF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.8899
  • 2000:$0.8839
  • 4000:$0.8729
  • 6000:$0.8619
  • 10000:$0.8399
FGPF10N60UNDF
DISTI # FGPF10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin TO-220F T/R (Alt: FGPF10N60UNDF)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1:€1.5099
  • 10:€1.2349
  • 25:€1.0559
  • 50:€0.9579
  • 100:€0.9429
  • 500:€0.9289
  • 1000:€0.9149
FGPF10N60UNDF
DISTI # 512-FGPF10N60UNDF
ON SemiconductorIGBT Transistors 600V, 10A Short Circuit Rated IGBT
RoHS: Compliant
1419
  • 1:$2.0000
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.1900
  • 1000:$0.9880
FGPF10N60UNDF
DISTI # 8648903P
ON SemiconductorIGBT 600V 10A SHORT CIRCUIT RATED TO220F, TU1720
  • 100:£0.9180
  • 50:£1.1420
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Mfr.#: RS6-1212S

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Module DC-DC 12VIN 1-OUT 12V 0.5A 6W 7-Pin SIP Module Tube
STGF4M65DF2

Mfr.#: STGF4M65DF2

OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, M S
ROE-1205S

Mfr.#: ROE-1205S

OMO.#: OMO-ROE-1205S-RECOM-POWER

DC to DC Converter Modules
CRV1D1212SC

Mfr.#: CRV1D1212SC

OMO.#: OMO-CRV1D1212SC-MURATA-POWER-SOLUTIONS

DC/DC TH 1W 5-5V SIP DUAL
PWD13F60

Mfr.#: PWD13F60

OMO.#: OMO-PWD13F60-STMICROELECTRONICS

POWER DRIVER
可用性
库存:
Available
订购:
1984
输入数量:
FGPF10N60UNDF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.00
US$2.00
10
US$1.70
US$17.00
100
US$1.36
US$136.00
500
US$1.19
US$595.00
1000
US$0.99
US$988.00
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