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IRF1503PBF

IRF1503PBF
Mfr. #:
IRF1503PBF
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
生命周期:
制造商新产品。
数据表:
IRF1503PBF 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
红外线
产品分类
FET - 单
打包
管子
单位重量
0.211644 oz
安装方式
通孔
包装盒
TO-220-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
330 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
48 ns
上升时间
130 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
240 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
3.3 mOhms
晶体管极性
N通道
典型关断延迟时间
59 ns
典型开启延迟时间
17 ns
Qg-门电荷
130 nC
通道模式
增强
Tags
IRF1503, IRF150, IRF15, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 240A;TO-220AB;PD 330W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***et
Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 30V, 240A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:3.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:960A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRF1503PBF
DISTI # IRF1503PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 75A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$1.5874
IRF1503PBF
DISTI # 32628576		Infineon Technologies AGTrans MOSFET N-CH Si 30V 240A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		19000
  • 3000:$1.4756
IRF1503PBF
DISTI # IRF1503PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1503PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$1.1900
  • 5000:$1.1900
  • 8000:$1.0900
  • 15000:$1.0900
  • 30000:$1.0900
IRF1503PBF
DISTI # 70016944		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 240A,TO-220AB,PD 330W,-55de
RoHS: Compliant		0
  • 3000:$3.7600
  • 6000:$3.6850
  • 15000:$3.5720
  • 30000:$3.4220
  • 75000:$3.1960
IRF1503PBF
DISTI # 942-IRF1503PBF		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
RoHS: Compliant		0
  • 3000:$1.8000
IRF1503PBFInternational RectifierPOWER FIELD-EFFECT TRANSISTOR, 75A I(D), 30V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB35
  • 30:$2.3588
  • 9:$2.5947
  • 1:$3.5382
IRF1503PBF
DISTI # IRF1503PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,240A,330W,TO220AB103
  • 1:$2.3500
  • 3:$2.1500
  • 10:$1.8200
  • 100:$1.5900
IRF1503PBFInternational Rectifier 
RoHS: Compliant		Europe - 220
    IRF1503PBF
    DISTI # XSKDRABV0021334    		Infineon Technologies AGPowerField-EffectTransistor,100AI(D),40V,0.009ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
    RoHS: Compliant    		1985 in Stock0 on Order
    • 1985:$2.0640
    • 400:$2.2080
    IRF1503PBF
    DISTI # 8657440    		Infineon Technologies AG 
    RoHS: Compliant    		0
    • 1000:$3.0600
    • 500:$3.2900
    • 250:$3.7100
    • 100:$4.1600
    • 10:$5.1300
    • 1:$6.2300
    图片 型号 描述
    IRF150P220XKMA1

    Mfr.#: IRF150P220XKMA1

    OMO.#: OMO-IRF150P220XKMA1

    		 MOSFET TRENCH_MOSFETS
    IRF150P221XKMA1

    Mfr.#: IRF150P221XKMA1

    OMO.#: OMO-IRF150P221XKMA1

    		 MOSFET TRENCH_MOSFETS
    IRF150P221XKMA1

    Mfr.#: IRF150P221XKMA1

    OMO.#: OMO-IRF150P221XKMA1-1190

    		 TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P221XKMA1)
    IRF1503STRRPBF

    Mfr.#: IRF1503STRRPBF

    OMO.#: OMO-IRF1503STRRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 75A D2PAK
    IRF150

    Mfr.#: IRF150

    OMO.#: OMO-IRF150-1190

    		 Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
    IRF1503PBF,IRF1503

    Mfr.#: IRF1503PBF,IRF1503

    OMO.#: OMO-IRF1503PBF-IRF1503-1190

    		 全新原装
    IRF1503STRPBF

    Mfr.#: IRF1503STRPBF

    OMO.#: OMO-IRF1503STRPBF-1190

    		 全新原装
    IRF150A

    Mfr.#: IRF150A

    OMO.#: OMO-IRF150A-1190

    		 全新原装
    IRF150D1

    Mfr.#: IRF150D1

    OMO.#: OMO-IRF150D1-1190

    		 全新原装
    IRF1503PBF

    Mfr.#: IRF1503PBF

    OMO.#: OMO-IRF1503PBF-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    IRF1503PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.64
    US$1.64
    10
    US$1.55
    US$15.53
    100
    US$1.47
    US$147.15
    500
    US$1.39
    US$694.90
    1000
    US$1.31
    US$1 308.00
    从...开始
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