产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI4435DDY-GE3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-SO

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 5W

晶体管型: 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 1350pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 11.4A (Tc)

Rds-On-Max-Id-Vgs: 24 mOhm @ 9.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 50nC @ 10V

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns 16 ns

上升时间: 8 ns 35 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 8.1 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

晶体管极性: P-通道

典型关断延迟时间: 45 ns 40 ns

典型开启延迟时间: 10 ns 42 ns

通道模式: 增强

Tags: SI4435DDY-T1, SI4435DDY-T, SI4435DD, SI4435D, SI4435, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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SI4435DDY-T1-GE3 描述

***ied Electronics & Automation: MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

SI4435DDY-T1-GE3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4435DDY-T1-GE3 DISTI # V72:2272_09216493	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	197	100:$0.3373 25:$0.4726 10:$0.4745 1:$0.5541
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 11.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	89In Stock	1000:$0.3384 500:$0.4231 100:$0.5711 10:$0.7400 1:$0.8500
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 11.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	89In Stock	1000:$0.3384 500:$0.4231 100:$0.5711 10:$0.7400 1:$0.8500
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 11.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2978
SI4435DDY-T1-GE3 DISTI # 24715364	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	155000	2500:$0.2681
SI4435DDY-T1-GE3 DISTI # 9769540	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	10000	2500:$0.2037
SI4435DDY-T1-GE3 DISTI # 30605307	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	378	100:$0.4080 50:$0.4985 10:$0.7484
SI4435DDY-T1-GE3 DISTI # 27510649	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	197	29:$0.5541
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R (Alt: SI4435DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 26860	2500:€0.4249 5000:€0.2889 10000:€0.2489 15000:€0.2299 25000:€0.2139
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4435DDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2759 5000:$0.2679 10000:$0.2569 15000:$0.2499 25000:$0.2429
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R (Alt: SI4435DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4435DDY-T1-GE3 DISTI # SI4435DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4435DDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.2909 25:$0.2909 62:$0.2899 125:$0.2889 312:$0.2889 625:$0.2879 1250:$0.2869
SI4435DDY-T1-GE3 DISTI # 84R8049	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84R8049) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7600 10:$0.6070 25:$0.5580 50:$0.5090 100:$0.4600 250:$0.4200 500:$0.3800
SI4435DDY-T1-GE3 DISTI # 15R5017	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: 15R5017) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	1:$0.2670 5000:$0.2570 10000:$0.2480
SI4435DDY-T1-GE3 DISTI # 23T8506	Vishay Intertechnologies	MOSFET Transistor, P Channel, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V , RoHS Compliant: Yes	5471	1:$0.7600 10:$0.6070 25:$0.5580 50:$0.5090 100:$0.4600 250:$0.4200 500:$0.3800 1000:$0.3040
SI4435DDY-T1-GE3 DISTI # 84R8049	Vishay Intertechnologies	P CHANNEL MOSFET,-30V,-8.1A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):19.5mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	3205	1:$0.2070 10:$0.2070 25:$0.2070 50:$0.2070 100:$0.2070 250:$0.2070 500:$0.2070 1000:$0.2070
SI4435DDY-T1-GE3 DISTI # 15R5017	Vishay Intertechnologies	P CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):19.5mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes	0	1:$0.2760 2500:$0.2670 5000:$0.2570 10000:$0.2480
SI4435DDY-T1-GE3. DISTI # 26AC3331	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2760 2500:$0.2670 5000:$0.2570 10000:$0.2480
SI4435DDY-T1-GE3 DISTI # 70026450	Vishay Siliconix	MOSFET,P-Ch,Vds -30V,Vgs +/- 20V,Rds(on) 19.5mohm,Id -8.1A,SO-8,Pd 2.5W RoHS: Compliant	1433	1:$0.5000 25:$0.4000 100:$0.3600
SI4435DDY-T1-GE3 DISTI # 70026138	Vishay Siliconix	MOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS +/-20V,-55 RoHS: Compliant	0	2500:$0.2800
SI4435DDY-T1-GE3 DISTI # 781-SI4435DDY-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	818	1:$0.7600 10:$0.6070 100:$0.4600 500:$0.3800 1000:$0.3040 2500:$0.2760 5000:$0.2570 10000:$0.2480 25000:$0.2380
SI4435DDY-T1-GE3 DISTI # 7103339	Vishay Intertechnologies	MOSFET P-CHANNEL 30V 8.1A SOIC8, PK	210	10:£0.5380 30:£0.4080 130:£0.3760 630:£0.3460 1250:£0.3180
SI4435DDY-T1-GE3 DISTI # 7103339P	Vishay Intertechnologies	MOSFET P-CHANNEL 30V 8.1A SOIC8, RL	3800	30:£0.4080 130:£0.3760 630:£0.3460 1250:£0.3180
SI4435DDY-T1-GE3	Vishay Intertechnologies	8100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	33	29:$0.5424 7:$0.7232 1:$0.9040
SI4435DDY-T1-GE3 DISTI # SI4435DDY-GE3	Vishay Intertechnologies	P-Ch 30V 11,4A 2,5W 0,024R SO8 RoHS: Compliant	3400	50:€0.2950 100:€0.2350 500:€0.2050 2500:€0.1980
SI4435DDY-T1-GE3	Vishay Intertechnologies	INSTOCK	462
SI4435DDY-T1-GE3	Vishay Intertechnologies	INSTOCK	311
SI4435DDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 65000	2500:$0.2390 5000:$0.2250 10000:$0.2180
SI4435DDY-T1-GE3.	Vishay Intertechnologies	MOSFET 30V 11.4A 5.0W 24mohm @ 10V RoHS: Compliant	Americas - 4900	25:$0.3790 100:$0.3260 250:$0.2890 500:$0.2670 1000:$0.2580
SI4435DDY-T1-GE3 DISTI # 2524622	Vishay Intertechnologies	P CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL RoHS: Compliant	0	2500:$0.4720
SI4435DDY-T1-GE3 DISTI # 1858951RL	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,8-SOIC RoHS: Compliant	0	1:$1.2100 10:$0.9610 100:$0.7280 500:$0.6020 1000:$0.4810 2500:$0.4370 5000:$0.4360
SI4435DDY-T1-GE3 DISTI # 1858951	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,8-SOIC RoHS: Compliant	5471	1:$1.2100 10:$0.9610 100:$0.7280 500:$0.6020 1000:$0.4810 2500:$0.4370 5000:$0.4360
SI4435DDY-T1-GE3 DISTI # 1858951	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,8-SOIC RoHS: Compliant	5861	5:£0.5860 25:£0.4620 100:£0.3940 250:£0.3600 500:£0.3250
SI4435DDY-T1-GE3 DISTI # C1S803604222993	Vishay Intertechnologies	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R RoHS: Compliant	378	100:$0.3200 50:$0.3910 10:$0.5870 1:$2.1000

图片	型号	描述
	Mfr.#: SI4435DDY-T1-GE3 OMO.#: OMO-SI4435DDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4435DDY-T1-E3 OMO.#: OMO-SI4435DDY-T1-E3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4435DDY-T1-E3-CUT TAPE OMO.#: OMO-SI4435DDY-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI4435DDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4435DDY-T1-GE3-CUT-TAPE-1190	全新原装
	Mfr.#: SI4435DDY OMO.#: OMO-SI4435DDY-1190	全新原装
	Mfr.#: SI4435DDY-T1 OMO.#: OMO-SI4435DDY-T1-1190	全新原装
	Mfr.#: SI4435DDY-T1-E OMO.#: OMO-SI4435DDY-T1-E-1190	全新原装
	Mfr.#: SI4435DDY-T1-E3 OMO.#: OMO-SI4435DDY-T1-E3-VISHAY	MOSFET P-CH 30V 11.4A 8SOIC
	Mfr.#: SI4435DDY-T1-E3 SOP8 OMO.#: OMO-SI4435DDY-T1-E3-SOP8-1190	全新原装
	Mfr.#: SI4435DDY-T1-E3. OMO.#: OMO-SI4435DDY-T1-E3--1190	P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO

SI4435DDY-T1-GE3

可用性

参考价格（美元）

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

SI4435DDY-T1-GE3

可用性

参考价格（美元）

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes