NE3514S02-T1C-A

NE3514S02-T1C-A
Mfr. #:
NE3514S02-T1C-A
制造商:
CEL
描述:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
生命周期:
制造商新产品。
数据表:
NE3514S02-T1C-A 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3514S02-T1C-A DatasheetNE3514S02-T1C-A Datasheet (P4-P6)NE3514S02-T1C-A Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商
电灯
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
安装方式
贴片/贴片
包装盒
S0-2
技术
砷化镓
晶体管型
pHEMT
获得
10 dB
钯功耗
165 mW
最高工作温度
+ 125 C
工作频率
20 GHz
Id 连续漏极电流
70 mA
Vds-漏-源-击穿电压
4 V
正向跨导最小值
55 mS
VGS-栅极-源极击穿电压
- 3 V
NF-噪声系数
0.75 dB
Tags
NE3514S02-T1C, NE3514S02-T, NE3514, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 70mA HFET 4-Pin Case S-02 T/R
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 10DB S02
型号 制造商 描述 库存 价格
NE3514S02-T1C-A
DISTI # NE3514S02-T1C-A-ND
California Eastern Laboratories (CEL)HJ-FET NCH 10DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3514S02-T1C-ARenesas Electronics Corporation 
    RoHS: Not Compliant
    2000
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    NE3514S02-T1C-A
    DISTI # 551-NE3514S02-T1C-A
    California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    RoHS: Compliant
    0
      NE3514S02-T1C-A(K)NEC Electronics GroupRF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET1185
      • 1027:$0.6825
      • 206:$0.7800
      • 1:$1.9500
      NE3514S02-T1C-A(K)NEC Electronics Group 1783
        图片 型号 描述
        NE3514S02-T1C-A(K)

        Mfr.#: NE3514S02-T1C-A(K)

        OMO.#: OMO-NE3514S02-T1C-A-K--1152

        RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
        NE3514S02-T1B-A

        Mfr.#: NE3514S02-T1B-A

        OMO.#: OMO-NE3514S02-T1B-A-1152

        RF SMALL SIGNAL TRANSISTOR HFET
        NE3514S02-T1D-A

        Mfr.#: NE3514S02-T1D-A

        OMO.#: OMO-NE3514S02-T1D-A-318

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-T1C-A

        Mfr.#: NE3514S02-T1C-A

        OMO.#: OMO-NE3514S02-T1C-A-CEL

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-A

        Mfr.#: NE3514S02-A

        OMO.#: OMO-NE3514S02-A-CEL

        RF JFET Transistors K Band Super Low Noise Amp N-Ch
        NE3514S02

        Mfr.#: NE3514S02

        OMO.#: OMO-NE3514S02-1190

        全新原装
        NE3514S02-T10

        Mfr.#: NE3514S02-T10

        OMO.#: OMO-NE3514S02-T10-1190

        全新原装
        NE3514S02-T1C

        Mfr.#: NE3514S02-T1C

        OMO.#: OMO-NE3514S02-T1C-1190

        全新原装
        NE3514S02-T1D

        Mfr.#: NE3514S02-T1D

        OMO.#: OMO-NE3514S02-T1D-1190

        全新原装
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        NE3514S02-T1C-A的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.93
        US$0.93
        10
        US$0.88
        US$8.83
        100
        US$0.84
        US$83.70
        500
        US$0.79
        US$395.25
        1000
        US$0.74
        US$744.00
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