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FGA90N33ATDTU

FGA90N33ATDTU
Mfr. #:
FGA90N33ATDTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 330V 90A PDP Trench
生命周期:
制造商新产品。
数据表:
FGA90N33ATDTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3PN-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
330 V
最大栅极发射极电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
FGA90N33ATD
打包：
管子
连续集电极电流 Ic 最大值：
90 A
高度：
18.9 mm
长度：
15.8 mm
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
单位重量：
0.225789 oz
Tags
FGA90N33AT, FGA90N33A, FGA90N33, FGA90, FGA9, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel
***th Star Micro
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 300V 90A 3-Pin(3+Tab) TO-3P Rail
***Yang
IGBT 300V 90A 219W Through Hole TO-3P - Bulk
***nell
IGBT, TO-3P; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:300V; Current Ic Continuous a Max:90A; Voltage, Vce Sat Max:1.4V; Power Dissipation:219W; Case Style:TO-3P; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:300V; Current Ic @ Vce Sat:20A; Current, Icm Pulsed:220A; No. of Pins:3; Pin Configuration:With flywheel diode; Power, Pd:219W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.57°C/W; Time, Fall:110ns; Time, Rise:200ns; Transistors, No. of:1
***p One Stop
Trans IGBT Chip N-CH 330V 70A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
330V UltraFast Copack Plasma Display Panel Trench IGBT in a TO-220AB package
***ineon SCT
This 330V IGBT is specifically designed for applications in Plasma Display Panels in a TO-220AB package, TO220COPAK-3, RoHS
***el Electronic
Fixed Inductors 75nH NO ±2% 0402 (1005 Metric) Tape & Reel (TR) 100MHz 1.224 Ω Max LQW15 Surface Mount Fixed Inductors 0402 75nH 135mA +/-2%
***i-Key
IGBT 330V 85A 150W TO3P
***ource
High Voltage IGBT with Diode
***S
new, original packaged
***enic
TO-3P IGBTs ROHS
***ical
Trans IGBT Chip N-CH 330V 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 330V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL/N-ch / 50A 330V 4th Gen PDP trench IGBT
***i-Key
IGBT, 330V, N-CHANNEL, TO-220AB
***rchild Semiconductor
Using novel trench IGBT technology, Fairchild's new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
***et
Trans IGBT Chip N-CH 330V 0.2A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 330V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
***ernational Rectifier
330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak package
***p One Stop
Trans IGBT Chip N-CH 330V 24A 3-Pin(3+Tab) TO-220AB
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:330V; Continuous Collector Current, Ic:24A; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:39W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
FGA90N33ATDTU
DISTI # V79:2366_17795264		ON SemiconductorN-CH/ 90A 330V PDP IGBT4
  • 100:$1.2466
  • 25:$1.3291
  • 10:$1.4671
  • 1:$1.6479
FGA90N33ATDTU
DISTI # FGA90N33ATDTU-ND		ON SemiconductorIGBT 330V 90A 223W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA90N33ATDTU
    DISTI # C1S541901396617    		ON SemiconductorIGBT Chip
    RoHS: Not Compliant    		4
    • 10:$1.5409
    FGA90N33ATDTU
    DISTI # FGA90N33ATDTU    		ON SemiconductorTrans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGA90N33ATDTU)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.7900
    • 900:$1.7900
    • 1800:$1.6900
    • 2700:$1.6900
    • 4500:$1.6900
    FGA90N33ATDTU
    DISTI # FGA90N33ATDTU    		ON SemiconductorTrans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube (Alt: FGA90N33ATDTU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€1.8900
    • 10:€1.7900
    • 25:€1.7900
    • 50:€1.6900
    • 100:€1.6900
    • 500:€1.5900
    • 1000:€1.5900
    FGA90N33ATDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel
    RoHS: Compliant    		12456
    • 1000:$3.2500
    • 500:$3.4200
    • 100:$3.5600
    • 25:$3.7100
    • 1:$4.0000
    FGA90N33ATDTU
    DISTI # 512-FGA90N33ATDTU    		ON SemiconductorIGBT Transistors 330V 90A PDP Trench
    RoHS: Compliant    		0
      FGA90N33ATDTUON SemiconductorINSTOCK7919
        FGA90N33ATDTUON Semiconductor 7200
        • 1:$4.7800
        • 100:$3.0600
        • 500:$2.5200
        • 1000:$2.3200
        图片 型号 描述
        FGA90N33ATTU

        Mfr.#: FGA90N33ATTU

        OMO.#: OMO-FGA90N33ATTU

        		 IGBT Transistors 330V 90A PDP Trench
        FGA90N33ATDTU

        Mfr.#: FGA90N33ATDTU

        OMO.#: OMO-FGA90N33ATDTU-ON-SEMICONDUCTOR

        		 IGBT Transistors 330V 90A PDP Trench
        FGA90N30

        Mfr.#: FGA90N30

        OMO.#: OMO-FGA90N30-1190

        		 全新原装
        FGA90N30D

        Mfr.#: FGA90N30D

        OMO.#: OMO-FGA90N30D-1190

        		 全新原装
        FGA90N30DTU

        Mfr.#: FGA90N30DTU

        OMO.#: OMO-FGA90N30DTU-ON-SEMICONDUCTOR

        		 IGBT 300V 90A 219W TO3P
        FGA90N30TU

        Mfr.#: FGA90N30TU

        OMO.#: OMO-FGA90N30TU-ON-SEMICONDUCTOR

        		 IGBT 300V 90A 219W TO3P
        FGA90N33ANTD

        Mfr.#: FGA90N33ANTD

        OMO.#: OMO-FGA90N33ANTD-1190

        		 全新原装
        FGA90N33AT

        Mfr.#: FGA90N33AT

        OMO.#: OMO-FGA90N33AT-1190

        		 全新原装
        FGA90N33BTD

        Mfr.#: FGA90N33BTD

        OMO.#: OMO-FGA90N33BTD-1190

        		 全新原装
        FGA90N33TD

        Mfr.#: FGA90N33TD

        OMO.#: OMO-FGA90N33TD-1190

        		 全新原装
        可用性
        库存:
        Available
        订购:
        4000
        输入数量:
        FGA90N33ATDTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$4.03
        US$4.03
        10
        US$3.43
        US$34.30
        100
        US$2.97
        US$297.00
        250
        US$2.82
        US$705.00
        500
        US$2.53
        US$1 265.00
        1000
        US$2.13
        US$2 130.00
        2500
        US$2.02
        US$5 050.00
        5000
        US$1.95
        US$9 750.00
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