MMBT6517LT1G

MMBT6517LT1G
Mfr. #:
MMBT6517LT1G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 500mA 350V NPN
生命周期:
制造商新产品。
数据表:
MMBT6517LT1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMBT6517LT1G DatasheetMMBT6517LT1G Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
SOT-23-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
350 V
集电极-基极电压 VCBO:
350 V
发射极基极电压 VEBO:
5 V
集电极-发射极饱和电压:
1 V
最大直流集电极电流:
0.5 A
增益带宽积 fT:
200 MHz
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
MMBT6517L
高度:
0.94 mm
长度:
2.9 mm
打包:
卷轴
宽度:
1.3 mm
品牌:
安森美半导体
连续集电极电流:
0.5 A
DC 集电极/基极增益 hfe 最小值:
20
Pd - 功耗:
225 mW
产品类别:
BJT - 双极晶体管
出厂包装数量:
3000
子类别:
晶体管
单位重量:
0.000282 oz
Tags
MMBT6517, MMBT651, MMBT65, MMBT6, MMBT, MMB
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
ON Semi MMBT6517LT1G NPN High Voltage Bipolar Transistor; 0.1 A; 350V; 3-Pin SOT-23
***eco
Trans General Purpose BJT NPN 350 Volt 0.1A 3-Pin SOT-23 Tape and Reel
***ical
Trans GP BJT NPN 350V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***ark
TRANSISTOR, NPN, 350V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:100mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***nell
BIPOLAR TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 30V; Current Ic Continuous a Max: 100mA; Hfe Min: 200; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar
型号 制造商 描述 库存 价格
MMBT6517LT1G
DISTI # MMBT6517LT1GOSTR-ND
ON SemiconductorTRANS NPN 350V 0.1A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    MMBT6517LT1G
    DISTI # MMBT6517LT1GOSCT-ND
    ON SemiconductorTRANS NPN 350V 0.1A SOT23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      MMBT6517LT1G
      DISTI # MMBT6517LT1GOSDKR-ND
      ON SemiconductorTRANS NPN 350V 0.1A SOT23
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NSVMMBT6517LT1G
        DISTI # NSVMMBT6517LT1G-ND
        ON SemiconductorTRANS NPN 350V 0.1A SOT23
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)
        Limited Supply - Call
          MMBT6517LT1G
          DISTI # 29X6106
          ON SemiconductorTRANSISTOR, NPN, 350V, 0.1A, SOT-23,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:200MHz,Power Dissipation Pd:225mW,DC Collector Current:100mA,DC Current Gain hFE:15hFE,Product Range:-RoHS Compliant: Yes0
            MMBT6517LT1G
            DISTI # 45J1537
            ON SemiconductorTRANSISTOR, NPN, 350V, 0.1A, SOT-23,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:200MHz,Power Dissipation Pd:225mW,DC Collector Current:100mA,DC Current Gain hFE:15hFE RoHS Compliant: Yes0
              MMBT6517LT1G
              DISTI # 70300425
              ON SemiconductorON Semi MMBT6517LT1G NPN High Voltage Bipolar Transistor,0.1 A,350V,3-Pin SOT-23
              RoHS: Compliant
              0
              • 200:$0.3000
              MMBT6517LT1G
              DISTI # 863-MMBT6517LT1G
              ON SemiconductorBipolar Transistors - BJT 500mA 350V NPN
              RoHS: Compliant
              0
                MMBT6517LT1
                DISTI # 863-MMBT6517LT1
                ON SemiconductorBipolar Transistors - BJT 500mA 350V NPN
                RoHS: Not compliant
                0
                  NSVMMBT6517LT1G
                  DISTI # 863-NSVMMBT6517LT1G
                  ON SemiconductorBipolar Transistors - BJT SS SOT23 HV XSTR NPN 35
                  RoHS: Compliant
                  0
                    MMBT6517LT1G
                    DISTI # 1653627RL
                    ON SemiconductorBIPOLAR TRANSISTOR
                    RoHS: Compliant
                    0
                    • 1:$0.7140
                    • 10:$0.5350
                    • 100:$0.3430
                    • 1000:$0.2860
                    • 3000:$0.2450
                    • 9000:$0.1720
                    • 24000:$0.1560
                    • 45000:$0.1390
                    MMBT6517LT1G
                    DISTI # 1653627
                    ON SemiconductorBIPOLAR TRANSISTOR
                    RoHS: Compliant
                    0
                    • 1:$0.7140
                    • 10:$0.5350
                    • 100:$0.3430
                    • 1000:$0.2860
                    • 3000:$0.2450
                    • 9000:$0.1720
                    • 24000:$0.1560
                    • 45000:$0.1390
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                    OMO.#: OMO-MMBT6517LT1G-ON-SEMICONDUCTOR

                    Bipolar Transistors - BJT 500mA 350V NPN
                    可用性
                    库存:
                    Available
                    订购:
                    4500
                    输入数量:
                    MMBT6517LT1G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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