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IHW40N120R3FKSA1

IHW40N120R3FKSA1
Mfr. #:
IHW40N120R3FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IHW40N120R3FKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
1.55 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
429 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
RC
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IHW40N120R3 SP000999770
单位重量：
0.155205 oz
Tags
IHW40N120R3, IHW40N120R, IHW40N12, IHW40N1, IHW40N, IHW4, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***Components
In a Tube of 30, Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247
***ure Electronics
IHW40N120R3 Series 1200 V 80 A Through Hole Reverse conducting IGBT - PG-TO247-3
***et Europe
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube
***an P&S
1200V,80A,Reverse Conducting IGBT
***ark
IGBT, SINGLE, 1.2KV, 80A, TO-247-3
***ronik
IGBT 1200V 80V 1,55V TO247-3
***i-Key
IGBT 1200V 80A 429W TO247-3
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:429W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT SINGOLO 1.2KV 80A TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:429W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
型号 制造商 描述 库存 价格
IHW40N120R3FKSA1
DISTI # V36:1790_06378756		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		2101
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0030
  • 10:$4.6129
  • 1:$5.9597
IHW40N120R3FKSA1
DISTI # V99:2348_06378756		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0030
  • 10:$4.6129
  • 1:$5.9597
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1-ND		Infineon Technologies AGIGBT 1200V 80A 429W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
  • 240:$4.2289
IHW40N120R3FKSA1
DISTI # 32927229		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		2101
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0020
  • 10:$4.6129
  • 3:$5.4180
IHW40N120R3FKSA1
DISTI # 30695368		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$3.4100
  • 250:$3.8050
  • 100:$4.0020
  • 10:$4.6129
  • 3:$5.4180
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube - Bulk (Alt: IHW40N120R3FKSA1)
RoHS: Compliant
Min Qty: 138
Container: Bulk		Americas - 0
  • 690:$2.2900
  • 1380:$2.2900
  • 414:$2.3900
  • 276:$2.4900
  • 138:$2.5900
IHW40N120R3FKSA1
DISTI # IHW40N120R3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW40N120R3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1200:$2.5900
  • 2400:$2.5900
  • 720:$2.6900
  • 480:$2.7900
  • 240:$2.8900
IHW40N120R3FKSA1
DISTI # SP000999770		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube (Alt: SP000999770)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.0900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.8900
IHW40N120R3FKSA1
DISTI # IHW40N120R3		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube (Alt: IHW40N120R3)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
  • 12000:$2.6144
  • 6000:$2.6479
  • 2400:$2.6823
  • 1200:$2.7176
  • 720:$2.7911
  • 480:$2.8686
  • 240:$2.9506
IHW40N120R3FKSA1
DISTI # 50Y1988		Infineon Technologies AGIGBT Single Transistor, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
  • 100:$4.4700
  • 50:$4.6800
  • 25:$4.8700
  • 10:$5.0800
  • 1:$5.9000
IHW40N120R3FKSA1
DISTI # 726-IHW40N120R3FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		68
  • 1:$5.4600
  • 10:$4.6400
  • 100:$4.0200
  • 250:$3.8200
  • 500:$3.4200
IHW40N120R3
DISTI # 726-IHW40N120R3		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
RoHS: Compliant		0
    IHW40N120R3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		21
    • 1000:$2.4000
    • 500:$2.5200
    • 100:$2.6200
    • 25:$2.7400
    • 1:$2.9500
    IHW40N120R3FKSA1
    DISTI # 1702259    		Infineon Technologies AGIGBT 1200V 40A TRENCHSTOP DIODE TO-247, TU76
    • 300:£2.6960
    • 150:£2.7830
    • 30:£3.2800
    IHW40N120R3FKSA1
    DISTI # 1702372    		Infineon Technologies AGIGBT 1200V 40A TRENCHSTOP DIODE TO-247, EA39
    • 10:£3.2100
    • 1:£4.0500
    IHW40N120R3FKSA1
    DISTI # 2480887    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 80A, TO-247-3
    RoHS: Compliant    		725
    • 1:$8.7200
    IHW40N120R3FKSA1
    DISTI # 2480887    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 80A, TO-247-3
    RoHS: Compliant    		690
    • 500:£2.7100
    • 250:£3.0400
    • 100:£3.1900
    • 10:£3.6800
    • 1:£4.8000
    图片 型号 描述
    C2M1000170D

    Mfr.#: C2M1000170D

    OMO.#: OMO-C2M1000170D

    		 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
    C4D15120H

    Mfr.#: C4D15120H

    OMO.#: OMO-C4D15120H

    		 Schottky Diodes & Rectifiers 15A 1200V SiC Schottky Diode
    STPSC20065DI

    Mfr.#: STPSC20065DI

    OMO.#: OMO-STPSC20065DI

    		 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
    860020672006

    Mfr.#: 860020672006

    OMO.#: OMO-860020672006

    		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG5 50V 2.2uF 20% ESR=31971mOhms
    MIKROE-1985

    Mfr.#: MIKROE-1985

    OMO.#: OMO-MIKROE-1985

    		 Interface Development Tools USB I2C click
    SN7534051NSR

    Mfr.#: SN7534051NSR

    OMO.#: OMO-SN7534051NSR

    		 RS-422 Interface IC Dual Differential Drivers and Receiver
    C3M0120090D

    Mfr.#: C3M0120090D

    OMO.#: OMO-C3M0120090D

    		 MOSFET G3 SiC MOSFET 900V, 120mOhm
    PA-T2X-38E

    Mfr.#: PA-T2X-38E

    OMO.#: OMO-PA-T2X-38E

    		 Heat Sinks 38mm Heatsink Anodized
    C2M1000170D

    Mfr.#: C2M1000170D

    OMO.#: OMO-C2M1000170D-WOLFSPEED

    		 MOSFET N-CH 1700V 4.9A TO247
    SN7534051NSR

    Mfr.#: SN7534051NSR

    OMO.#: OMO-SN7534051NSR-TEXAS-INSTRUMENTS

    		 RS-422 Interface IC Dual Differential Drivers and Receive
    可用性
    库存:
    48
    订购:
    2031
    输入数量:
    IHW40N120R3FKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$5.46
    US$5.46
    10
    US$4.64
    US$46.40
    100
    US$4.02
    US$402.00
    250
    US$3.82
    US$955.00
    500
    US$3.42
    US$1 710.00
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