SIHP33N60EF-GE3

Mfr. #:: SIHP33N60EF-GE3
制造商:: Vishay
描述:: Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
生命周期:: 制造商新产品。
数据表:: SIHP33N60EF-GE3 数据表
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更多信息:: SIHP33N60EF-GE3 更多信息

产品属性
属性值

Tags: SIHP33, SIHP3, SIHP, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHP33N60EF-GE3 描述

***ark: N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220

***ical: Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB

***et: Trans MOSFET N-CH 600V 33A 3-Pin TO-220AB

***Components: MOSFET 600V 33A W/FAST DIODE TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 33A, TO-220AB-3

***i-Key: MOSFET N-CH 600V 33A TO-220-3

***C: MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET

***et Europe: MOS Power Transistors HV (>= 200V)

***: N-CH 600V T0-220

***nell: MOSFET, CANALE N, 600V, 33A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:33A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-

SIHP33N60EF-GE3 更多信息

EF Series High Voltage Power MOSFETs: Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

Market price

型号	制造商	描述	库存	价格
SIHP33N60EF-GE3 DISTI # SIHP33N60EF-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 33A TO-220-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$3.7868 500:$4.3478 100:$5.1893 10:$6.3110 1:$7.0100
SIHP33N60EF-GE3 DISTI # SIHP33N60EF-GE3	Vishay Intertechnologies	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHP33N60EF-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.6900 2000:$3.5900 4000:$3.3900 6000:$3.2900 10000:$3.1900
SIHP33N60EF-GE3 DISTI # 31Y6763	Vishay Intertechnologies	MOS Power Transistors HV (>= 200V) - Bulk (Alt: 31Y6763) RoHS: Not Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$6.3800 10:$5.7400 25:$5.4900 50:$5.2300 100:$4.7200 250:$4.3400 500:$3.9600
SIHP33N60EF-GE3 DISTI # 31Y6763	Vishay Intertechnologies	MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	39	1:$6.3800 10:$5.7400 25:$5.4900 50:$5.2300 100:$4.7200 250:$4.3400 500:$3.9600
SIHP33N60EF-GE3 DISTI # 78-SIHP33N60EF-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant	1273	1:$6.3800 10:$5.7400 50:$5.2300 100:$4.7200 250:$4.3400 500:$3.9600
SIHP33N60EF-GE3	Vishay Siliconix		500
SIHP33N60EF-GE3 DISTI # 9034487P	Vishay Intertechnologies	MOSFET 600V 33A W/FAST DIODE TO-220AB, TU	20	2:£5.0550
SIHP33N60EF-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SIHP33N60E-GE3 OMO.#: OMO-SIHP33N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	Mfr.#: SIHP33N60EF-GE3 OMO.#: OMO-SIHP33N60EF-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	Mfr.#: SIHP33N60EF-GE3 OMO.#: OMO-SIHP33N60EF-GE3-VISHAY	Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
	Mfr.#: SIHP33N60E OMO.#: OMO-SIHP33N60E-1190	全新原装
	Mfr.#: SIHP33N60E-GE3 OMO.#: OMO-SIHP33N60E-GE3-VISHAY	MOSFET N-CH 600V 33A TO-220AB

SIHP33N60EF-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes