FDG313N

Mfr. #:: FDG313N
制造商:: ON Semiconductor
描述:: MOSFET N-CH 25V 0.95A SC70-6
生命周期:: 制造商新产品。
数据表:: FDG313N 数据表
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ECAD Model:

产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 卷轴

部分别名: FDG313N_NL

单位重量: 0.000988 oz

安装方式: 贴片/贴片

包装盒: SC-70-6

技术: 硅

通道数: 1 Channel

配置: 单四漏

晶体管型: 1 N-Channel

钯功耗: 750 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8.5 ns

上升时间: 8.5 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 950 mA

Vds-漏-源-击穿电压: 25 V

Rds-On-Drain-Source-Resistance: 350 mOhms

晶体管极性: N通道

典型关断延迟时间: 17 ns

典型开启延迟时间: 3 ns

正向跨导最小值: 1.5 S

通道模式: 增强

Tags: FDG313, FDG31, FDG3, FDG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDG313N 描述

***ureElectronics: NChannel25V450mOhmSurfaceMountDigitalFETMosfetSC706

***ment14APAC: MOSFETNSMD6SC70;TransistorPolarityNChannel;ContinuousDrainCurrentId950mA;DrainSourceVoltageVds25V;OnResistanceRdson450mohm;RdsonTestVoltageVgs45V;ThresholdVoltageVgsTyp800mV;PowerDissipationPd750mW;TransistorCaseStyleSC70;NoofPins6;SVHCNoSVHC19Dec2011;CurrentIdMax950mA;PackageCaseSC70;PowerDissipationPd750mW;TerminationTypeSMD;VoltageVdsTyp25V;VoltageVgsMax800mV;VoltageVgsRdsonMeasurement45V

***rchildSemiconductor: ThisNChannelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietaryhighcelldensityDMOStechnologyThisveryhighdensityprocessisespeciallytailoredtominimizeonstateresistanceThisdevicehasbeendesignedespeciallyforlowvoltageapplicationsasareplacementforbipolardigitaltransistorandsmallsignalMOSFET

Market price

型号	制造商	描述	库存	价格
FDG313N DISTI # FDG313NFSTR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313NFSCT-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDG313N DISTI # FDG313NFSDKR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDG313N_D87Z DISTI # FDG313N_D87Z-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313N	ON Semiconductor	Trans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N) RoHS: Compliant Min Qty: 1087 Container: Bulk	Americas - 0	10870:$0.2829 5435:$0.2909 3261:$0.2939 2174:$0.2979 1087:$0.2999
FDG313N DISTI # 512-FDG313N	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N_D87Z DISTI # 512-FDG313N_D87Z	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1655418	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
FDG313N	Fairchild Semiconductor Corporation	950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000	1112:$0.1400 223:$0.1800 1:$0.4000
FDG313N DISTI # 8063371P	ON Semiconductor	MOSFETFAIRCHILDFDG313N, RL	260	200:£0.1280
FDG313N	Fairchild Semiconductor Corporation		5521
FDG313N	Fairchild Semiconductor Corporation		5609
FDG313N	Fairchild Semiconductor Corporation		2617
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	1	500:£0.2010 250:£0.2200 100:£0.2390 10:£0.4130 1:£0.5120
FDG313N DISTI # 1471044RL	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100

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