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IRFU7440PBF

IRFU7440PBF
Mfr. #:
IRFU7440PBF
制造商:
Infineon Technologies
描述:
MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak
生命周期:
制造商新产品。
数据表:
IRFU7440PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU7440PBF DatasheetIRFU7440PBF Datasheet (P4-P6)IRFU7440PBF Datasheet (P7-P9)IRFU7440PBF Datasheet (P10-P12)
ECAD Model:
更多信息:
IRFU7440PBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
40 V
Id - 连续漏极电流：
180 A
Rds On - 漏源电阻：
2.4 mOhms
Vgs th - 栅源阈值电压：
3.9 V
Qg - 门电荷：
134 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
140 W
配置：
单身的
频道模式：
增强
商品名：
强IRFET
打包：
管子
高度：
6.22 mm
长度：
6.73 mm
晶体管类型：
1 N-Channel
宽度：
2.38 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
280 S
秋季时间：
34 ns
产品类别：
MOSFET
上升时间：
39 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
51 ns
典型的开启延迟时间：
11 ns
第 # 部分别名：
SP001565158
单位重量：
0.139332 oz
Tags
IRFU7, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 40V, 90A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:163W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH Si 40V 127A Automotive 3-Pin(3+Tab) IPAK Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ser
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
***ter Electronics
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
型号 制造商 描述 库存 价格
IRFU7440PBF
DISTI # IRFU7440PBF-ND		Infineon Technologies AGMOSFET N CH 40V 90A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1050:$0.7672
  • 525:$0.9718
  • 150:$1.2532
  • 75:$1.4323
  • 1:$1.7900
IRFU7440PBF
DISTI # SP001565158		Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(3+Tab) IPAK Bulk (Alt: SP001565158)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Europe - 2350
  • 1:€0.8449
  • 10:€0.7509
  • 25:€0.6759
  • 50:€0.6139
  • 100:€0.5629
  • 500:€0.5199
  • 1000:€0.4829
IRFU7440PBF
DISTI # IRFU7440PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(3+Tab) IPAK Bulk - Rail/Tube (Alt: IRFU7440PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.5359
  • 6000:$0.5159
  • 12000:$0.4969
  • 18000:$0.4809
  • 30000:$0.4719
IRFU7440PBF
DISTI # IRFU7440PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(3+Tab) IPAK Bulk (Alt: IRFU7440PBF)
RoHS: Compliant
Min Qty: 3000
Container: Bulk		Asia - 0
    IRFU7440PBF
    DISTI # 70394794    		Infineon Technologies AGIRFU7440PBF N-channel MOSFET Transistor,90 A,180 A,40 V,3-Pin IPAK
    RoHS: Compliant    		0
    • 450:$1.4300
    IRFU7440PBF
    DISTI # 942-IRFU7440PBF    		Infineon Technologies AGMOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak
    RoHS: Compliant    		38
    • 1:$1.5300
    • 10:$1.3100
    • 100:$1.0000
    • 500:$0.8840
    IRFU7440PBF
    DISTI # IRFU7440PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,180A,140W,IPAK115
    • 1:$1.4500
    • 3:$1.2800
    • 10:$1.1000
    • 75:$0.9400
    IRFU7440PBF
    DISTI # IRFU7440PBF    		Infineon Technologies AGN-Ch 40V 90A 140W 0,0024R TO251AA
    RoHS: Compliant    		45
    • 15:€0.8830
    • 75:€0.6830
    • 300:€0.5830
    • 600:€0.5610
    IRFU7440PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 300
      IRFU7440PBF
      DISTI # 2253812      		Infineon Technologies AGMOSFET, N-CH, 40V, 90A, I-PAK
      RoHS: Compliant      		53
      • 5:£1.0900
      • 25:£0.9900
      • 100:£0.7570
      • 250:£0.7130
      • 500:£0.6680
      IRFU7440PBF
      DISTI # 2253812      		Infineon Technologies AGMOSFET, N-CH, 40V, 90A, I-PAK
      RoHS: Compliant      		0
      • 1:$2.4300
      • 10:$2.0700
      • 100:$1.5900
      • 500:$1.4000
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      		 Voltage References Dual Output Vref & Vref/2 Voltage Ref
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      OMO.#: OMO-LMR16006XDDCR

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      ERJ-2RKF1000X

      Mfr.#: ERJ-2RKF1000X

      OMO.#: OMO-ERJ-2RKF1000X

      		 Thick Film Resistors - SMD 0402 100ohms 1% AEC-Q200
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      		 Schottky Diodes & Rectifiers 1A 100V
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      		 Standard LEDs - SMD Green Clear 569nm
      REF1933AIDDCT

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      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      IRFU7440PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.52
      US$1.52
      10
      US$1.30
      US$13.00
      100
      US$1.00
      US$100.00
      500
      US$0.88
      US$442.00
      1000
      US$0.70
      US$698.00
      3000
      US$0.62
      US$1 857.00
      9000
      US$0.60
      US$5 364.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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