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IPB35N12S3L26ATMA1

IPB35N12S3L26ATMA1
Mfr. #:
IPB35N12S3L26ATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-CHANNEL 100+
生命周期:
制造商新产品。
数据表:
IPB35N12S3L26ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB35N12S3L26ATMA1 DatasheetIPB35N12S3L26ATMA1 Datasheet (P4-P6)IPB35N12S3L26ATMA1 Datasheet (P7-P9)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
资质：
AEC-Q101
打包：
卷轴
高度：
4.4 mm
长度：
10 mm
宽度：
9.25 mm
品牌：
英飞凌科技
湿气敏感：
是的
产品类别：
MOSFET
出厂包装数量：
1000
子类别：
MOSFET
第 # 部分别名：
IPB35N12S3L-26 SP001398600
单位重量：
0.077603 oz
Tags
IPB35N, IPB35, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CHANNEL_100+
***ineon
Summary of Features: OptiMOS - power MOSFET for automotive applications; N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested
型号 制造商 描述 库存 价格
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL_100+
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.6121
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1		Infineon Technologies AGMOSFET_(120V,300V) - Bulk (Alt: IPB35N12S3L26ATMA1)
Min Qty: 758
Container: Bulk		Americas - 0
  • 758:$0.5039
  • 760:$0.4859
  • 1518:$0.4679
  • 3790:$0.4519
  • 7580:$0.4439
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1		Infineon Technologies AGMOSFET_(120V,300V) - Tape and Reel (Alt: IPB35N12S3L26ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.5339
  • 2000:$0.5149
  • 4000:$0.4959
  • 6000:$0.4789
  • 10000:$0.4709
IPB35N12S3L26ATMA1
DISTI # 726-IPB35N12S3L26AT		Infineon Technologies AGMOSFET N-CHANNEL 100+
RoHS: Compliant		0
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7980
  • 500:$0.7050
  • 1000:$0.5570
  • 2000:$0.4940
  • 10000:$0.4750
IPB35N12S3L26ATMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 120V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		23000
  • 1000:$0.4600
  • 500:$0.4900
  • 100:$0.5100
  • 25:$0.5300
  • 1:$0.5700
图片 型号 描述
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1

 MOSFET N-CHANNEL 100+
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL_100+
可用性
库存:
Available
订购:
2000
输入数量:
IPB35N12S3L26ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.21
US$1.21
10
US$1.03
US$10.30
100
US$0.80
US$79.80
500
US$0.70
US$352.50
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