IXTX600N04T2

Mfr. #:: IXTX600N04T2
制造商:: Littelfuse
描述:: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
生命周期:: 制造商新产品。
数据表:: IXTX600N04T2 数据表
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ECAD Model:
更多信息:: IXTX600N04T2 更多信息

产品属性
属性值

制造商: IXYS

产品分类: PMIC - 栅极驱动器

Tags: IXTX6, IXTX, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTX600N04T2 描述

***i-Key: MOSFET N-CH 40V 600A PLUS247

***S: new, original packaged

***el Nordic: Contact for details

IXTX600N04T2 更多信息

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

GigaMOS™ TrenchT2™ Power MOSFETs: IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Market price

型号	制造商	描述	库存	价格
IXTX600N04T2 DISTI # IXTX600N04T2-ND	IXYS Corporation	MOSFET N-CH 40V 600A PLUS247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$16.0767
IXTX600N04T2 DISTI # 747-IXTX600N04T2	IXYS Corporation	Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant	0	1:$19.7500 10:$17.7600 25:$16.2000 50:$15.0100 100:$14.5900 250:$13.4300 500:$12.2500

图片	型号	描述
	Mfr.#: IXTX600N04T2 OMO.#: OMO-IXTX600N04T2	MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
	Mfr.#: IXTX60N50L2 OMO.#: OMO-IXTX60N50L2	MOSFET 60 Amps 500V
	Mfr.#: IXTX600N04T2 OMO.#: OMO-IXTX600N04T2-IXYS-CORPORATION	Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
	Mfr.#: IXTX60N50L2 OMO.#: OMO-IXTX60N50L2-IXYS-CORPORATION	MOSFET N-CH 500V 60A PLUS247

IXTX600N04T2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes