S25FL128SAGMFVG03

Mfr. #:: S25FL128SAGMFVG03
制造商:: Cypress Semiconductor
描述:: Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN T&R PACKING, WITH RESET#
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更多信息:: S25FL128SAGMFVG03 更多信息 S25FL128SAGMFVG03 Product Details

产品属性
属性值

制造商: 赛普拉斯半导体公司

产品分类: 记忆

系列: FL-S

打包: 卷带 (TR) 替代包装

包装盒: 16-SOIC (0.295", 7.50mm Width)

工作温度: -40°C ~ 105°C (TA)

界面: SPI 串行

电压供应: 2.7 V ~ 3.6 V

供应商-设备-包: 16-SOIC

内存大小: 128M (16M x 8)

内存型: 闪存 - NOR

速度: 133MHz

格式化内存: 闪光

Tags: S25FL128SAGMFVG, S25FL128SAGMFV, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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S25FL128SAGMFVG03 描述

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-16, RoHS

***ark: TAPE AND REEL / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN T&R PACKING, WITH RESET#

***i-Key: IC FLASH 128MBIT SPI/QUAD 16SOIC

S25FL128SAGMFVG03 更多信息

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

型号	制造商	描述	库存	价格
S25FL128SAGMFVG03 DISTI # S25FL128SAGMFVG03-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 1450 Container: Tape & Reel (TR)	Temporarily Out of Stock	1450:$2.6802
S25FL128SAGMFVG03 DISTI # 727-25FL128SAGMFVG03	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$4.8700 10:$4.3500 25:$3.9200 100:$3.5700 250:$3.2200 500:$2.6100 1450:$2.4400 2900:$2.3100

图片	型号	描述
	Mfr.#: S25FL128SAGMFVG03 OMO.#: OMO-S25FL128SAGMFVG03	NOR Flash Nor
	Mfr.#: S25FL128LAGBHI023 OMO.#: OMO-S25FL128LAGBHI023	NOR Flash Nor
	Mfr.#: S25FL128SAGNFA003 OMO.#: OMO-S25FL128SAGNFA003	NOR Flash Nor
	Mfr.#: S25FL128LAGBHV033 OMO.#: OMO-S25FL128LAGBHV033	NOR Flash Nor
	Mfr.#: S25FL128P0XMFI003 OMO.#: OMO-S25FL128P0XMFI003	NOR Flash 128M CMOS 3V/104MHZ Serial NOR Flash
	Mfr.#: S25FL128LAGMFM000 OMO.#: OMO-S25FL128LAGMFM000-CYPRESS-SEMICONDUCTOR	IC 128 MB FLASH MEMORY
	Mfr.#: S25FL128LAGBHM023 OMO.#: OMO-S25FL128LAGBHM023-CYPRESS-SEMICONDUCTOR	IC 128M FLASH MEMORY Automotive, AEC-Q100, FL-L
	Mfr.#: S25FL128SAGMFB000 OMO.#: OMO-S25FL128SAGMFB000-CYPRESS-SEMICONDUCTOR	Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TRAY PACKING)
	Mfr.#: S25FL128SAGMFI010 OMO.#: OMO-S25FL128SAGMFI010-CYPRESS-SEMICONDUCTOR	IC FLASH 128M SPI 133MHZ 16SOIC
	Mfr.#: S25FL128SAGMFI003 OMO.#: OMO-S25FL128SAGMFI003-CYPRESS-SEMICONDUCTOR	Flash 128Mb 3V 133MHz Serial NOR Flash

S25FL128SAGMFVG03

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes