SIS990DN-T1-GE3

Name: Vishay - SIS990DN-T1-GE3
Brand: Vishay
SKU: OMO-2922785
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIS990DN-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 100V .085ohm@10V 12.1A Dual N-Ch
生命周期:: 制造商新产品。
数据表:: SIS990DN-T1-GE3 数据表
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更多信息:: SIS990DN-T1-GE3 更多信息

产品属性
属性值

制造商

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: ThunderFET TrenchFET

包装盒: PowerPAKR 1212-8 Dual

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: PowerPAKR 1212-8 Dual

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 25W

晶体管型: 2 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 250pF @ 50V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 12.1A

Rds-On-Max-Id-Vgs: 85 mOhm @ 8A, 10V

Vgs-th-Max-Id: 4V @ 250μA

栅极电荷-Qg-Vgs: 8nC @ 10V

钯功耗: 25 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 6 ns

上升时间: 8 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 12.1 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 86 mOhms

晶体管极性: N通道

典型关断延迟时间: 8 ns

典型开启延迟时间: 8 ns

Qg-门电荷: 5.2 nC

正向跨导最小值: 11 S

Tags: SIS9, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS990DN-T1-GE3 描述

***et Europe: Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R

***ark: Dual N-Channel 100-V (D-S) Mosfet

***i-Key: MOSFET 2N-CH 100V 12.1A 1212-8

***et: N-CH POWERPAK1212 BWL 30V 2.2MOHM@10V

***ronik: N-CH 100V 12A 85mOhm PPAK1212

***: N-CHANNEL 100-V DUAL

SIS990DN-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SIS990DN-T1-GE3 DISTI # V72:2272_09215518	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	11648	6000:$0.3396 3000:$0.3512 1000:$0.3628 500:$0.4463 250:$0.5091 100:$0.5147 25:$0.6400 10:$0.6475 1:$0.7627
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2007In Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2007In Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4096
SIS990DN-T1-GE3 DISTI # 27537544	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	11648	6000:$0.3396 3000:$0.3512 1000:$0.3628 500:$0.4463 250:$0.5091 100:$0.5147 25:$0.6400 17:$0.6475
SIS990DN-T1-GE3 DISTI # 29754374	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	6000	3000:$0.4111
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS990DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS990DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIS990DN-T1-GE3 DISTI # 55X4645	Vishay Intertechnologies	DUAL N-CHANNEL 100-V (D-S) MOSFET	0	1:$0.4580 1000:$0.4390 2000:$0.3990 4000:$0.3600 6000:$0.3460 10000:$0.3380
SIS990DN-T1-GE3 DISTI # 78-SIS990DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	31568	1:$0.9400 10:$0.7670 100:$0.5880 500:$0.5060 1000:$0.3990 3000:$0.3730 6000:$0.3540
SIS990DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 6000
SIS990DN-T1-GE3 DISTI # C1S803605233190	Vishay Intertechnologies	MOSFETs	11648	250:$0.5091 100:$0.5147 25:$0.6400 10:$0.6475

SIS990DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes