FQP8N60C

FQP8N60C
Mfr. #:
FQP8N60C
制造商:
ON Semiconductor
描述:
IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series
生命周期:
制造商新产品。
数据表:
FQP8N60C 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
金融服务中心
产品分类
FET - 单
打包
管子
部分别名
FQP8N60C_NL
单位重量
0.063493 oz
安装方式
通孔
包装盒
TO-220-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
147 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
64.5 ns
上升时间
60.5 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
7.5 A
Vds-漏-源-击穿电压
600 V
Rds-On-Drain-Source-Resistance
1.2 Ohms
晶体管极性
N通道
典型关断延迟时间
81 ns
典型开启延迟时间
16.5 ns
正向跨导最小值
8.7 S
通道模式
增强
Tags
FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
FQP8N60C
DISTI # FQP8N60C-ND
ON SemiconductorMOSFET N-CH 600V 7.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 1000:$1.0170
  • 500:$1.2274
  • 100:$1.5781
  • 10:$1.9640
  • 1:$2.1700
FQP8N60C
DISTI # FQP8N60C
ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7599
  • 2000:$0.7559
  • 4000:$0.7459
  • 6000:$0.7359
  • 10000:$0.7179
FQP8N60C
DISTI # 97K0198
ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes0
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2500:$0.8610
  • 5000:$0.8290
FQP8N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
43736
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FQP8N60C
DISTI # 512-FQP8N60C
ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant
926
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2000:$0.8610
  • 5000:$0.8290
  • 10000:$0.7970
FQP8N60C_Q
DISTI # 512-FQP8N60C_Q
ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Not compliant
0
    FQP8N60C
    DISTI # 1095074
    ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant
    47
    • 5:£1.1600
    • 25:£1.0600
    • 100:£0.8100
    • 250:£0.7630
    • 500:£0.7160
    FQP8N60C
    DISTI # 1095074
    ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant
    52
    • 1:$1.5100
    FQP8N60C
    DISTI # XSFP00000021118
    Fairchild Semiconductor Corporation 
    RoHS: Compliant
    3365
    • 1000:$1.8700
    • 3365:$1.7000
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    IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series
    FQP8N60C_Q

    Mfr.#: FQP8N60C_Q

    OMO.#: OMO-FQP8N60C-Q-1190

    MOSFET 600V N-Ch Q-FET advance C-Series
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    FQP8N60C的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.03
    US$1.03
    10
    US$0.97
    US$9.75
    100
    US$0.92
    US$92.33
    500
    US$0.87
    US$436.00
    1000
    US$0.82
    US$820.70
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