NSBA114EF3T5G

NSBA114EF3T5G
Mfr. #:
NSBA114EF3T5G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
生命周期:
制造商新产品。
数据表:
NSBA114EF3T5G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114EF3T5G DatasheetNSBA114EF3T5G Datasheet (P4-P6)NSBA114EF3T5G Datasheet (P7-P9)NSBA114EF3T5G Datasheet (P10-P12)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - 预偏置
RoHS:
Y
配置:
单身的
晶体管极性:
PNP
典型输入电阻:
10 kOhms
典型电阻比:
1
安装方式:
贴片/贴片
包装/案例:
SOT-1123-3
集电极-发射极电压 VCEO 最大值:
50 V
连续集电极电流:
100 mA
峰值直流集电极电流:
100 mA
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
NSBA114EF3
打包:
卷轴
高度:
0.37 mm
长度:
0.6 mm
宽度:
0.8 mm
品牌:
安森美半导体
产品类别:
BJT - 双极晶体管 - 预偏置
出厂包装数量:
8000
子类别:
晶体管
Tags
NSBA114E, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 10 k
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R
***ark
Brt Transistor, 50V, 10K/10Kohm, Sot1123; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes
***th Star Micro
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT1123 package which is designed for low power surface mount applications.
型号 制造商 描述 库存 价格
NSBA114EF3T5G
DISTI # NSBA114EF3T5G-ND
ON SemiconductorTRANS PREBIAS PNP 254MW SOT1123
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0977
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel
Europe - 0
  • 8000:€0.1469
  • 16000:€0.1109
  • 32000:€0.1009
  • 48000:€0.0899
  • 80000:€0.0849
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R - Tape and Reel (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel
Americas - 0
  • 16000:$0.0779
  • 32000:$0.0769
  • 48000:$0.0759
  • 80000:$0.0749
  • 160000:$0.0739
NSBA114EF3T5G
DISTI # 49X8912
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes0
  • 5000:$0.1070
  • 2500:$0.1260
  • 1000:$0.1550
  • 500:$0.1820
  • 250:$0.2160
  • 100:$0.2580
  • 50:$0.3090
  • 1:$0.4030
NSBA114EF3T5G
DISTI # 01P5096
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123, FULL REEL,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,RF Transistor Case:SOT-1123 RoHS Compliant: Yes0
  • 1:$0.1200
NSBA114EF3T5GON Semiconductor 
RoHS: Not Compliant
221500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBA114EF3T5G
DISTI # 863-NSBA114EF3T5G
ON SemiconductorBipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
RoHS: Compliant
8000
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
图片 型号 描述
NSBA114TDP6T5G

Mfr.#: NSBA114TDP6T5G

OMO.#: OMO-NSBA114TDP6T5G

Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA114YF3T5G

Mfr.#: NSBA114YF3T5G

OMO.#: OMO-NSBA114YF3T5G

Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA113EDXV6T1

Mfr.#: NSBA113EDXV6T1

OMO.#: OMO-NSBA113EDXV6T1-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114EDXV6T1

Mfr.#: NSBA114EDXV6T1

OMO.#: OMO-NSBA114EDXV6T1-1190

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T1G

Mfr.#: NSBA114TDXV6T1G

OMO.#: OMO-NSBA114TDXV6T1G-1190

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T5G

Mfr.#: NSBA114TDXV6T5G

OMO.#: OMO-NSBA114TDXV6T5G-1190

TRANS PREBIAS DUAL PNP SOT563
NSBA115TDP6T5G

Mfr.#: NSBA115TDP6T5G

OMO.#: OMO-NSBA115TDP6T5G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased DUAL PBRT
可用性
库存:
Available
订购:
1991
输入数量:
NSBA114EF3T5G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.35
US$0.35
10
US$0.27
US$2.66
100
US$0.14
US$14.40
1000
US$0.11
US$108.00
2500
US$0.09
US$232.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
Top