SKP10N60

SKP10N60
Mfr. #:
SKP10N60
制造商:
INF
描述:
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
生命周期:
制造商新产品。
数据表:
SKP10N60 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
中频
产品分类
IGBT - 单
Tags
SKP10N6, SKP10N, SKP10, SKP1, SKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, FAST; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.4V; Power Dissipation Pd: 92W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tempe
***ark
IGBT, FAST; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.4V; Power Dissipation:92W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter ;RoHS Compliant: Yes
***ment14 APAC
IGBT, FAST; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:92W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Ic @ Vce Sat:10A; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:SKP10N60; Fall Time tf:29ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Pin Format:1G, 2C, 3E; Power Dissipation Max:92W; Power Dissipation Pd:92W; Power Dissipation Ptot Max:92W; Pulsed Current Icm:40A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型号 制造商 描述 库存 价格
SKP10N60AXKSA1
DISTI # SKP10N60AXKSA1-ND
Infineon Technologies AGIGBT 600V 20A 92W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    SKP10N60A
    DISTI # 726-SKP10N60A
    Infineon Technologies AGIGBT Transistors FAST IGBT NPT TECH 600V 10A
    RoHS: Compliant
    0
      SKP10N60AXKSA1
      DISTI # N/A
      Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
        SKP10N60Infineon Technologies AGInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant
        69958
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          可用性
          库存:
          Available
          订购:
          3000
          输入数量:
          SKP10N60的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
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