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SI3424BDV-T1-GE3

SI3424BDV-T1-GE3
Mfr. #:
SI3424BDV-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI3424BDV-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3424BDV-T1-GE3 DatasheetSI3424BDV-T1-GE3 Datasheet (P4-P6)SI3424BDV-T1-GE3 Datasheet (P7-P9)SI3424BDV-T1-GE3 Datasheet (P10-P11)
ECAD Model:
更多信息:
SI3424BDV-T1-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TSOP-6
商品名：
沟槽场效应晶体管
打包：
卷轴
系列：
SI3
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI3424BDV-GE3
单位重量：
0.000705 oz
Tags
SI3424B, SI3424, SI342, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si3424BDV Series N-Channel 30 V 28 mOhms Surface Mount Power Mosfet - TSOP-6
***et
Trans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.1W ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI3424BDV-T1-GE3
DISTI # V72:2272_09216619		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 25:$0.3975
  • 10:$0.4416
  • 1:$0.5288
SI3424BDV-T1-GE3
DISTI # V36:1790_09216619		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.1841
  • 1500000:$0.1842
  • 300000:$0.1933
  • 30000:$0.2071
  • 3000:$0.2093
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1795
  • 15000:$0.1822
  • 6000:$0.1958
  • 3000:$0.2092
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # 31658403		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 34:$0.3975
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3424BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1731
  • 18000:$0.1779
  • 12000:$0.1829
  • 6000:$0.1907
  • 3000:$0.1965
SI3424BDV-T1-GE3
DISTI # 84R8033		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:2.1W RoHS Compliant: Yes
RoHS: Compliant		0
    SI3424BDV-T1-GE3
    DISTI # 781-SI3424BDV-GE3    		Vishay IntertechnologiesMOSFET 30V 8.0A 2.98W 28mohm @ 10V
    RoHS: Compliant    		2945
    • 1:$0.6100
    • 10:$0.4920
    • 100:$0.3640
    • 500:$0.2970
    • 1000:$0.2310
    • 3000:$0.2090
    • 6000:$0.1950
    • 9000:$0.1820
    • 24000:$0.1760
    SI3424BDV-T1-GE3Vishay Intertechnologies 620
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      可用性
      库存:
      Available
      订购:
      1985
      输入数量:
      SI3424BDV-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.63
      US$0.63
      10
      US$0.49
      US$4.87
      100
      US$0.36
      US$36.10
      500
      US$0.30
      US$148.50
      1000
      US$0.23
      US$229.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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