IRFBE30SPBF

Mfr. #:: IRFBE30SPBF
制造商:: Vishay
描述:: Darlington Transistors MOSFET N-Chan 800V 4.1 Amp
生命周期:: 制造商新产品。
数据表:: IRFBE30SPBF 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 管子

单位重量: 0.050717 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 125 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 30 ns

上升时间: 33 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 4.1 A

Vds-漏-源-击穿电压: 800 V

Rds-On-Drain-Source-Resistance: 3 Ohms

晶体管极性: N通道

典型关断延迟时间: 82 ns

典型开启延迟时间: 12 ns

通道模式: 增强

Tags: IRFBE30S, IRFBE3, IRFBE, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFBE30SPBF 描述

***ure Electronics: Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - D2PAK-3

***p One Stop Global: Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK

***Components: MOSFET N-Channel 800V 4.1A D2PAK

***i-Key: MOSFET N-CH 800V 4.1A D2PAK

***: N-CH 800V HEXFET MOSFET D2-PA

***ark: MOSFET N-CHANNEL 800V

***ronik: N-CH 800V 4.1A 3000mOhm TO263AA

***rt123: D2-PAK (TO-263)

Market price

型号	制造商	描述	库存	价格
IRFBE30SPBF DISTI # V99:2348_09218967	Vishay Intertechnologies	Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK RoHS: Compliant	985	2000:$1.4170 1000:$1.4910 500:$1.6720 250:$1.8210 100:$1.9280 10:$2.3529 1:$2.7610
IRFBE30SPBF DISTI # IRFBE30SPBF-ND	Vishay Siliconix	MOSFET N-CH 800V 4.1A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	779In Stock	1000:$1.7710 500:$2.0999 100:$2.5933 50:$2.8462 1:$3.5400
IRFBE30SPBF DISTI # 26648418	Vishay Intertechnologies	Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK RoHS: Compliant	985	500:$1.7680 250:$1.8940 100:$1.9900 10:$2.3230 4:$2.6930
IRFBE30SPBF DISTI # IRFBE30SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK (Alt: IRFBE30SPBF) RoHS: Compliant Min Qty: 1	Europe - 250	1:€1.5900 10:€1.4900 25:€1.4900 50:€1.4900 100:€1.2900 500:€1.0900 1000:€1.0900
IRFBE30SPBF DISTI # IRFBE30SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRFBE30SPBF) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.5900 2000:$1.5900 4000:$1.4900 6000:$1.4900 10000:$1.3900
IRFBE30SPBF DISTI # 63J6696	Vishay Intertechnologies	N CHANNEL MOSFET, 800V, 4.1A D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:4.1A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:- RoHS Compliant: Yes	0	1:$3.0500 10:$2.5100 100:$2.2900 250:$2.0700 500:$1.8100 1000:$1.5800 2000:$1.4700 5000:$1.3700
IRFBE30SPBF DISTI # 70017379	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 800V,RDS(ON) 3 Ohms,ID 4.1A,D2Pak,PD 125W,VGS +/-20V,-55 RoHS: Compliant	0	1000:$1.5600
IRFBE30SPBF DISTI # 844-IRFBE30SPBF	Vishay Intertechnologies	MOSFET N-Chan 800V 4.1 Amp RoHS: Compliant	1085	1:$3.2300 10:$2.6700 100:$2.2000 250:$2.1300 500:$1.9100 1000:$1.6100 2000:$1.5300 5000:$1.4800
IRFBE30S DISTI # 844-IRFBE30S	Vishay Intertechnologies	MOSFET N-Chan 800V 4.1 Amp RoHS: Not compliant	0
IRFBE30SPBF	Vishay Siliconix		640
IRFBE30SPBF	Vishay Intertechnologies	RoHS: Compliant	Europe - 20000
IRFBE30SPBF	Vishay Intertechnologies	MOSFET N-Chan 800V 4.1 Amp RoHS: Compliant	Americas - 125	25:$2.1380 100:$1.8470 250:$1.5860 500:$1.5610 1000:$1.5390
IRFBE30SPBF DISTI # C1S803600853917	Vishay Intertechnologies	Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK RoHS: Compliant	985	500:$1.7680 250:$1.8940 100:$1.9900 10:$2.3230 1:$2.6930

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