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IKD04N60RATMA1

IKD04N60RATMA1
Mfr. #:
IKD04N60RATMA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT w/ INTG DIODE 600V 8A
生命周期:
制造商新产品。
数据表:
IKD04N60RATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-252-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.65 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
8 A
Pd - 功耗：
75 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
RC
打包：
卷轴
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
2500
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKD04N60R SP000964626
Tags
IKD04N60RA, IKD04N60R, IKD04N, IKD04, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market, PG-TO252-3, RoHS
***nell
IGBT+ DIODE,600V,4A,TO252; DC Collector Current: 4A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; O
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps & Drives; Fans; Home Appliance; Industrial drives; Air Conditioner
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
***i-Key
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors 600V/3A
***ser
IGBTs 600V/3A
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 220pF 100volts C0G +/-5% Hi Rel
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3.0 A
*** Electronic Components
IGBT Transistors N-Ch 600 Volt 3.0 A
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
***(Formerly Allied Electronics)
IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
***-Wing Technology
Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns
***ical
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
型号 制造商 描述 库存 价格
IKD04N60RATMA1
DISTI # V72:2272_06384328		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2473
  • 1000:$0.4414
  • 500:$0.5326
  • 250:$0.6085
  • 100:$0.6147
  • 25:$0.8064
  • 10:$0.8959
  • 1:$1.0580
IKD04N60RATMA1
DISTI # V36:1790_06384328		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.4214
  • 1250000:$0.4218
  • 250000:$0.4564
  • 25000:$0.5209
  • 2500:$0.5319
IKD04N60RATMA1
DISTI # IKD04N60RATMA1CT-ND		Infineon Technologies AGIGBT 600V 8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IKD04N60RATMA1
    DISTI # IKD04N60RATMA1DKR-ND    		Infineon Technologies AGIGBT 600V 8A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1TR-ND      		Infineon Technologies AGIGBT 600V 8A TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.5319
      IKD04N60RATMA1
      DISTI # 26195432      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		2473
      • 14:$1.0580
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Bulk (Alt: IKD04N60RATMA1)
      Min Qty: 807
      Container: Bulk      		Americas - 0
      • 8070:$0.3929
      • 4035:$0.4009
      • 2421:$0.4139
      • 1614:$0.4299
      • 807:$0.4459
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD04N60RATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.4589
      • 15000:$0.4679
      • 10000:$0.4839
      • 5000:$0.5019
      • 2500:$0.5209
      IKD04N60RATMA1
      DISTI # SP000964626      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R (Alt: SP000964626)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.4049
      • 15000:€0.4359
      • 10000:€0.4729
      • 5000:€0.5159
      • 2500:€0.6299
      IKD04N60RATMA1
      DISTI # 726-IKD04N60RATMA1      		Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 8A
      RoHS: Compliant      		1574
      • 1:$0.9700
      • 10:$0.8280
      • 100:$0.6360
      • 500:$0.5620
      • 1000:$0.4440
      • 2500:$0.3940
      • 10000:$0.3790
      IKD04N60RATMA1Infineon Technologies AGInfineon Discrete IGBT without Anti-Parallel DiodeIKD04N60RA - TO252-3
      RoHS: Not Compliant      		2319
      • 1000:$0.4100
      • 500:$0.4300
      • 100:$0.4500
      • 25:$0.4700
      • 1:$0.5000
      IKD04N60RATMA1
      DISTI # IKD04N60R      		Infineon Technologies AG600V 8A 75W TO252
      RoHS: Compliant      		0
      • 5:€1.3200
      • 50:€0.7200
      • 200:€0.4200
      • 500:€0.4000
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      Mfr.#: IPN60R3K4CEATMA1

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      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      IKD04N60RATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.97
      US$0.97
      10
      US$0.83
      US$8.28
      100
      US$0.64
      US$63.60
      500
      US$0.56
      US$281.00
      1000
      US$0.44
      US$444.00
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