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FGL60N100BNTDTU

FGL60N100BNTDTU
Mfr. #:
FGL60N100BNTDTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors HIGH POWER
生命周期:
制造商新产品。
数据表:
FGL60N100BNTDTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-264-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1000 V
集电极-发射极饱和电压：
1.5 V
最大栅极发射极电压：
25 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
180 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
FGL60N100BNTD
打包：
管子
连续集电极电流 Ic 最大值：
60 A
高度：
26 mm
长度：
20 mm
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
60 A
栅极-发射极漏电流：
+/- 500 nA
产品类别：
IGBT晶体管
出厂包装数量：
375
子类别：
IGBT
第 # 部分别名：
FGL60N100BNTDTU_NL
单位重量：
0.238311 oz
Tags
FGL60N100BNTDT, FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, igbt, n-Chan+Diode, 1Kv V(Br)Ces, 42A I(C), to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
型号 制造商 描述 库存 价格
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$4.0482
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.2900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 109
Container: Bulk		Americas - 0
  • 1090:$2.7900
  • 218:$2.8900
  • 327:$2.8900
  • 545:$2.8900
  • 109:$2.9900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 3750:$2.4900
  • 750:$2.5900
  • 1500:$2.5900
  • 2250:$2.5900
  • 375:$2.6900
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTU
DISTI # 512-FGL60N100BNTDTU		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
    RoHS: Compliant    		25
    • 1000:$3.0300
    • 500:$3.1900
    • 100:$3.3200
    • 25:$3.4600
    • 1:$3.7300
    图片 型号 描述
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTD

    Mfr.#: FGL60N100BNTD

    OMO.#: OMO-FGL60N100BNTD-ON-SEMICONDUCTOR

    		 IGBT 1000V 60A 180W TO264
    FGL60N100ANTD

    Mfr.#: FGL60N100ANTD

    OMO.#: OMO-FGL60N100ANTD-1190

    		 全新原装
    FGL60N100BNTD,FGL40N120A

    Mfr.#: FGL60N100BNTD,FGL40N120A

    OMO.#: OMO-FGL60N100BNTD-FGL40N120A-1190

    		 全新原装
    FGL60N100BNTDU

    Mfr.#: FGL60N100BNTDU

    OMO.#: OMO-FGL60N100BNTDU-1190

    		 全新原装
    FGL60N100D

    Mfr.#: FGL60N100D

    OMO.#: OMO-FGL60N100D-1190

    		 全新原装
    FGL60N170

    Mfr.#: FGL60N170

    OMO.#: OMO-FGL60N170-1190

    		 全新原装
    FGL60N170BNTD

    Mfr.#: FGL60N170BNTD

    OMO.#: OMO-FGL60N170BNTD-1190

    		 全新原装
    FGL60N170N

    Mfr.#: FGL60N170N

    OMO.#: OMO-FGL60N170N-1190

    		 全新原装
    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    FGL60N100BNTDTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    375
    US$3.15
    US$1 181.25
    750
    US$2.83
    US$2 122.50
    1125
    US$2.39
    US$2 688.75
    2625
    US$2.27
    US$5 958.75
    5250
    US$2.18
    US$11 445.00
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