SCT3022KLHRC11

SCT3022KLHRC11
Mfr. #:
SCT3022KLHRC11
制造商:
Rohm Semiconductor
描述:
MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
生命周期:
制造商新产品。
数据表:
SCT3022KLHRC11 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SCT3022KLHRC11 更多信息
产品属性
属性值
制造商:
罗姆半导体
产品分类:
MOSFET
RoHS:
Y
技术:
碳化硅
安装方式:
通孔
包装/案例:
TO-247N-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
1200 V
Id - 连续漏极电流:
95 A
Rds On - 漏源电阻:
22 mOhms
Vgs th - 栅源阈值电压:
2.7 V
Vgs - 栅源电压:
- 4 V, 22 V
Qg - 门电荷:
178 nC
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
Pd - 功耗:
427 W
配置:
单身的
频道模式:
增强
打包:
管子
系列:
SCT3x
晶体管类型:
1 N-Channel
品牌:
罗姆半导体
正向跨导 - 最小值:
14.2 S
秋季时间:
28 ns
产品类别:
MOSFET
上升时间:
44 ns
出厂包装数量:
30
子类别:
MOSFET
典型关断延迟时间:
67 ns
典型的开启延迟时间:
29 ns
Tags
SCT3022K, SCT302, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
型号 制造商 描述 库存 价格
SCT3022KLHRC11
DISTI # SCT3022KLHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 25:$101.6896
  • 10:$104.5340
  • 1:$110.2200
SCT3022KLHRC11
DISTI # SCT3022KLHRC11
ROHM SemiconductorTransistor MOSFET N-CH 1200V 95A 3-Pin TO-247N Tube (Alt: SCT3022KLHRC11)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€79.1900
  • 500:€84.8900
  • 100:€87.9900
  • 50:€91.3900
  • 25:€94.9900
  • 10:€98.9900
  • 1:€107.9900
SCT3022KLHRC11
DISTI # 02AH4680
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$88.4100
  • 50:$94.0500
  • 25:$95.4400
  • 10:$96.8800
  • 5:$99.7500
  • 1:$102.5000
SCT3022KLHRC11
DISTI # 755-SCT3022KLHRC11
ROHM SemiconductorMOSFET 1200V 95A 427W SIC 22mOhm TO-247N
RoHS: Compliant
0
  • 1:$113.7700
  • 5:$111.6800
  • 10:$106.6600
  • 25:$101.7000
SCT3022KLHRC11
DISTI # TMOS2738
ROHM SemiconductorSiC N-CH 1200V 95A 22mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$133.0200
SCT3022KLHRC11
DISTI # 3052186
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W0
  • 10:£77.5900
  • 5:£82.2000
  • 1:£86.8100
SCT3022KLHRC11ROHM SemiconductorMOSFET 1200V 95A 427W SIC 22mOhm TO-247N
RoHS: Compliant
Americas -
    SCT3022KLHRC11
    DISTI # 3052186
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
    RoHS: Compliant
    0
    • 1:$155.0600
    图片 型号 描述
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11

    MOSFET Nch 1200V 95A SiC TO-247N
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11

    MOSFET 650V 93A 339W SIC 22mOhm TO-247N
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11

    MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11

    MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11-ROHM-SEMI

    SCT3022KL IS AN SIC (SILICON CAR
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11-ROHM-SEMI

    MOSFET NCH 650V 93A TO247N
    SCT3022KL

    Mfr.#: SCT3022KL

    OMO.#: OMO-SCT3022KL-1190

    全新原装
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    SCT3022KLHRC11的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$113.77
    US$113.77
    5
    US$111.68
    US$558.40
    10
    US$106.66
    US$1 066.60
    25
    US$101.70
    US$2 542.50
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