CGH55015F2

CGH55015F2
Mfr. #:
CGH55015F2
制造商:
N/A
描述:
RF JFET Transistors 4.5-6GHz 13Watt GaN Sm. Sig. Gain 12dB
生命周期:
制造商新产品。
数据表:
CGH55015F2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH55015F2 更多信息
产品属性
属性值
制造商
Wolfspeed / 克里
产品分类
晶体管 - FET、MOSFET - 单
打包
托盘
安装方式
拧紧
工作温度范围
-
包装盒
440166
技术
氮化镓碳化硅
配置
单身的
晶体管型
HEMT
获得
12 dB
班级
-
输出功率
10 W
钯功耗
-
最高工作温度
+ 150 C
最低工作温度
- 40 C
应用
-
工作频率
4.5 GHz to 6 GHz
Id 连续漏极电流
1.5 A
Vds-漏-源-击穿电压
120 V
VGS-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Resistance
-
晶体管极性
N通道
正向跨导最小值
-
VGS-栅极-源极击穿电压
- 10 V to + 2 V
栅源截止电压
-
最大漏栅电压
-
NF-噪声系数
-
P1dB-压缩点
-
Tags
CGH55015F2, CGH55015, CGH5501, CGH55, CGH5, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440166
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGH55015F2
DISTI # CGH55015F2-ND
WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray
133In Stock
  • 1:$68.0200
CGH55015F2
DISTI # 941-CGH55015F2
Cree, Inc.RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt
RoHS: Compliant
93
  • 1:$68.0200
  • 10:$64.3500
  • 25:$62.5200
  • 50:$61.6000
  • 100:$61.1400
CGH55015F2
DISTI # CGH55015F2
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
60
  • 1:$68.0200
图片 型号 描述
CGH55015F1

Mfr.#: CGH55015F1

OMO.#: OMO-CGH55015F1

RF JFET Transistors GaN HEMT 5.5-5.8GHz, 15 Watt
CGH55030F1

Mfr.#: CGH55030F1

OMO.#: OMO-CGH55030F1

RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
CGH55030F2

Mfr.#: CGH55030F2

OMO.#: OMO-CGH55030F2

RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
CGH55015F1/P1

Mfr.#: CGH55015F1/P1

OMO.#: OMO-CGH55015F1-P1-1190

全新原装
CGH55015F2/P1

Mfr.#: CGH55015F2/P1

OMO.#: OMO-CGH55015F2-P1-1190

全新原装
CGH55030F2/P1

Mfr.#: CGH55030F2/P1

OMO.#: OMO-CGH55030F2-P1-1190

全新原装
CGH55030F2/P2

Mfr.#: CGH55030F2/P2

OMO.#: OMO-CGH55030F2-P2-1190

全新原装
CGH5506194FLF

Mfr.#: CGH5506194FLF

OMO.#: OMO-CGH5506194FLF-1190

Thick Film Resistors - Through Hole
CGH55015F2

Mfr.#: CGH55015F2

OMO.#: OMO-CGH55015F2-WOLFSPEED

RF JFET Transistors 4.5-6GHz 13Watt GaN Sm. Sig. Gain 12dB
CGH55030F1

Mfr.#: CGH55030F1

OMO.#: OMO-CGH55030F1-WOLFSPEED

RF MOSFET HEMT 28V 440166
可用性
库存:
Available
订购:
1000
输入数量:
CGH55015F2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$91.71
US$91.71
10
US$87.12
US$871.25
100
US$82.54
US$8 253.90
500
US$77.95
US$38 976.75
1000
US$73.37
US$73 368.00
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